Avalanche noise in magnetic field tunable avalanche transit time device

Partha Banerjee, Qing Hao, Arindam Biswas, A. K. Bhattacharjee, Aritra Acharyya

Research output: ResearchConference contribution

Abstract

Influences of magnetic field on the noise performance of double-drift region (DDR) impact avalanche transit time (IMPATT) device based on Si designed to operate within W-band (75-110 GHz) have been studied in this paper. The reverse biased DDR IMPATT structure under transverse magnetic field can be regarded as magnetic field tunable avalanche transit time (MAGTATT) device. The simulation results show that both the noise spectral density and noise measure of the device increase significantly while the device is kept in transverse magnetic field. This degradation of the noise performance of the device enhances when the magnitude of the magnetic field is increased. Therefore, in order to achieve the magnetic field tuning of the RF properties of DDR IMPATTs as reported earlier by the authors, the noise performance of the source has to be sacrificed in fair extent.

LanguageEnglish (US)
Title of host publication2016 International Conference on Computer, Electrical and Communication Engineering, ICCECE 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509044320
DOIs
StatePublished - Aug 11 2017
Event2016 International Conference on Computer, Electrical and Communication Engineering, ICCECE 2016 - Kolkata, India
Duration: Dec 16 2016Dec 17 2016

Other

Other2016 International Conference on Computer, Electrical and Communication Engineering, ICCECE 2016
CountryIndia
CityKolkata
Period12/16/1612/17/16

Fingerprint

transit time
avalanches
magnetic fields
Avalanche
Magnetic Field
Transit time devices
Magnetic fields
Transverse
white noise
tuning
degradation
simulation
Spectral Density
Biased
Reverse
Tuning
Degradation
Simulation
Influence
Spectral density

Keywords

  • MAGTATT
  • Noise Measure
  • Noise Spectral Density
  • sensitivity
  • transverse magnetic field

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Signal Processing
  • Electrical and Electronic Engineering
  • Control and Optimization
  • Instrumentation

Cite this

Banerjee, P., Hao, Q., Biswas, A., Bhattacharjee, A. K., & Acharyya, A. (2017). Avalanche noise in magnetic field tunable avalanche transit time device. In 2016 International Conference on Computer, Electrical and Communication Engineering, ICCECE 2016 [8009570] Institute of Electrical and Electronics Engineers Inc.. DOI: 10.1109/ICCECE.2016.8009570

Avalanche noise in magnetic field tunable avalanche transit time device. / Banerjee, Partha; Hao, Qing; Biswas, Arindam; Bhattacharjee, A. K.; Acharyya, Aritra.

2016 International Conference on Computer, Electrical and Communication Engineering, ICCECE 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 8009570.

Research output: ResearchConference contribution

Banerjee, P, Hao, Q, Biswas, A, Bhattacharjee, AK & Acharyya, A 2017, Avalanche noise in magnetic field tunable avalanche transit time device. in 2016 International Conference on Computer, Electrical and Communication Engineering, ICCECE 2016., 8009570, Institute of Electrical and Electronics Engineers Inc., 2016 International Conference on Computer, Electrical and Communication Engineering, ICCECE 2016, Kolkata, India, 12/16/16. DOI: 10.1109/ICCECE.2016.8009570
Banerjee P, Hao Q, Biswas A, Bhattacharjee AK, Acharyya A. Avalanche noise in magnetic field tunable avalanche transit time device. In 2016 International Conference on Computer, Electrical and Communication Engineering, ICCECE 2016. Institute of Electrical and Electronics Engineers Inc.2017. 8009570. Available from, DOI: 10.1109/ICCECE.2016.8009570
Banerjee, Partha ; Hao, Qing ; Biswas, Arindam ; Bhattacharjee, A. K. ; Acharyya, Aritra. / Avalanche noise in magnetic field tunable avalanche transit time device. 2016 International Conference on Computer, Electrical and Communication Engineering, ICCECE 2016. Institute of Electrical and Electronics Engineers Inc., 2017.
@inbook{b605a93579ea40a5b7b7168ac9d5ec85,
title = "Avalanche noise in magnetic field tunable avalanche transit time device",
abstract = "Influences of magnetic field on the noise performance of double-drift region (DDR) impact avalanche transit time (IMPATT) device based on Si designed to operate within W-band (75-110 GHz) have been studied in this paper. The reverse biased DDR IMPATT structure under transverse magnetic field can be regarded as magnetic field tunable avalanche transit time (MAGTATT) device. The simulation results show that both the noise spectral density and noise measure of the device increase significantly while the device is kept in transverse magnetic field. This degradation of the noise performance of the device enhances when the magnitude of the magnetic field is increased. Therefore, in order to achieve the magnetic field tuning of the RF properties of DDR IMPATTs as reported earlier by the authors, the noise performance of the source has to be sacrificed in fair extent.",
keywords = "MAGTATT, Noise Measure, Noise Spectral Density, sensitivity, transverse magnetic field",
author = "Partha Banerjee and Qing Hao and Arindam Biswas and Bhattacharjee, {A. K.} and Aritra Acharyya",
year = "2017",
month = "8",
doi = "10.1109/ICCECE.2016.8009570",
booktitle = "2016 International Conference on Computer, Electrical and Communication Engineering, ICCECE 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - CHAP

T1 - Avalanche noise in magnetic field tunable avalanche transit time device

AU - Banerjee,Partha

AU - Hao,Qing

AU - Biswas,Arindam

AU - Bhattacharjee,A. K.

AU - Acharyya,Aritra

PY - 2017/8/11

Y1 - 2017/8/11

N2 - Influences of magnetic field on the noise performance of double-drift region (DDR) impact avalanche transit time (IMPATT) device based on Si designed to operate within W-band (75-110 GHz) have been studied in this paper. The reverse biased DDR IMPATT structure under transverse magnetic field can be regarded as magnetic field tunable avalanche transit time (MAGTATT) device. The simulation results show that both the noise spectral density and noise measure of the device increase significantly while the device is kept in transverse magnetic field. This degradation of the noise performance of the device enhances when the magnitude of the magnetic field is increased. Therefore, in order to achieve the magnetic field tuning of the RF properties of DDR IMPATTs as reported earlier by the authors, the noise performance of the source has to be sacrificed in fair extent.

AB - Influences of magnetic field on the noise performance of double-drift region (DDR) impact avalanche transit time (IMPATT) device based on Si designed to operate within W-band (75-110 GHz) have been studied in this paper. The reverse biased DDR IMPATT structure under transverse magnetic field can be regarded as magnetic field tunable avalanche transit time (MAGTATT) device. The simulation results show that both the noise spectral density and noise measure of the device increase significantly while the device is kept in transverse magnetic field. This degradation of the noise performance of the device enhances when the magnitude of the magnetic field is increased. Therefore, in order to achieve the magnetic field tuning of the RF properties of DDR IMPATTs as reported earlier by the authors, the noise performance of the source has to be sacrificed in fair extent.

KW - MAGTATT

KW - Noise Measure

KW - Noise Spectral Density

KW - sensitivity

KW - transverse magnetic field

UR - http://www.scopus.com/inward/record.url?scp=85029455502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85029455502&partnerID=8YFLogxK

U2 - 10.1109/ICCECE.2016.8009570

DO - 10.1109/ICCECE.2016.8009570

M3 - Conference contribution

BT - 2016 International Conference on Computer, Electrical and Communication Engineering, ICCECE 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -