We describe a novel approach to determining absorption coefficients in thin films using luminescence. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. We examine the absorption edge for GaAs/AlGaAs multiple quantum well structures with quantum well widths ranging from 54 to 193 Å. Urbach parameters and excitonic linewidths are tabulated.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)