Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

Alan Kost, H. C. Lee, Yao Zou, P. D. Dapkus, Elsa Garmire

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We describe a novel approach to determining absorption coefficients in thin films using luminescence. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. We examine the absorption edge for GaAs/AlGaAs multiple quantum well structures with quantum well widths ranging from 54 to 193 Å. Urbach parameters and excitonic linewidths are tabulated.

Original languageEnglish (US)
Pages (from-to)1356-1358
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number14
DOIs
StatePublished - 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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