Optical gain and net material gain via direct bandgap transition at around 1550nm of the tensilestrain band-engineered n-type Ge has been analyzed. Photoluminescence spectra measured at room temperature confirm the theoretical predictions.
|Original language||English (US)|
|Journal||Optics InfoBase Conference Papers|
|State||Published - 2008|
|Event||Integrated Photonics and Nanophotonics Research and Applications, IPNRA 2008 - Boston, MA, United States|
Duration: Jul 13 2008 → Jul 16 2008
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics