Abstract
Optical gain and net material gain via direct bandgap transition at around 1550nm of the tensilestrain band-engineered n-type Ge has been analyzed. Photoluminescence spectra measured at room temperature confirm the theoretical predictions.
Original language | English (US) |
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Journal | Optics InfoBase Conference Papers |
DOIs | |
State | Published - 2008 |
Externally published | Yes |
Event | Integrated Photonics and Nanophotonics Research and Applications, IPNRA 2008 - Boston, MA, United States Duration: Jul 13 2008 → Jul 16 2008 |
ASJC Scopus subject areas
- Instrumentation
- Atomic and Molecular Physics, and Optics