Band-engineered Ge as gain medium for Si-based laser

Xiaochen Sun; Jifeng Liu; Lionel C. Kimerling; Jurgen Michel; Thomas L. Koch

doi:10.1364/ipnra.2008.imc5

Band-engineered Ge as gain medium for Si-based laser

Xiaochen Sun, Jifeng Liu, Lionel C. Kimerling, Jurgen Michel, Thomas L. Koch

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Optical gain and net material gain via direct bandgap transition at around 1550nm of the tensilestrain band-engineered n-type Ge has been analyzed. Photoluminescence spectra measured at room temperature confirm the theoretical predictions.

Original language	English (US)
Journal	Optics InfoBase Conference Papers
DOIs	https://doi.org/10.1364/ipnra.2008.imc5
State	Published - 2008
Externally published	Yes
Event	Integrated Photonics and Nanophotonics Research and Applications, IPNRA 2008 - Boston, MA, United States Duration: Jul 13 2008 → Jul 16 2008

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

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10.1364/ipnra.2008.imc5

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@article{e33ab8fce8b540cf913d934a06368655,

title = "Band-engineered Ge as gain medium for Si-based laser",

abstract = "Optical gain and net material gain via direct bandgap transition at around 1550nm of the tensilestrain band-engineered n-type Ge has been analyzed. Photoluminescence spectra measured at room temperature confirm the theoretical predictions.",

author = "Xiaochen Sun and Jifeng Liu and Kimerling, {Lionel C.} and Jurgen Michel and Koch, {Thomas L.}",

year = "2008",

doi = "10.1364/ipnra.2008.imc5",

language = "English (US)",

journal = "Optics InfoBase Conference Papers",

issn = "2162-2701",

note = "Integrated Photonics and Nanophotonics Research and Applications, IPNRA 2008 ; Conference date: 13-07-2008 Through 16-07-2008",

}

TY - JOUR

T1 - Band-engineered Ge as gain medium for Si-based laser

AU - Sun, Xiaochen

AU - Liu, Jifeng

AU - Kimerling, Lionel C.

AU - Michel, Jurgen

AU - Koch, Thomas L.

PY - 2008

Y1 - 2008

N2 - Optical gain and net material gain via direct bandgap transition at around 1550nm of the tensilestrain band-engineered n-type Ge has been analyzed. Photoluminescence spectra measured at room temperature confirm the theoretical predictions.

AB - Optical gain and net material gain via direct bandgap transition at around 1550nm of the tensilestrain band-engineered n-type Ge has been analyzed. Photoluminescence spectra measured at room temperature confirm the theoretical predictions.

UR - http://www.scopus.com/inward/record.url?scp=76949092983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76949092983&partnerID=8YFLogxK

U2 - 10.1364/ipnra.2008.imc5

DO - 10.1364/ipnra.2008.imc5

M3 - Conference article

AN - SCOPUS:76949092983

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

SN - 2162-2701

T2 - Integrated Photonics and Nanophotonics Research and Applications, IPNRA 2008

Y2 - 13 July 2008 through 16 July 2008

ER -

Band-engineered Ge as gain medium for Si-based laser

Abstract

ASJC Scopus subject areas

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