Band offset in (Ga, In)As/Ga(As, Sb) heterostructures

S. Gies, M. J. Weseloh, C. Fuchs, W. Stolz, J. Hader, J. V. Moloney, S. W. Koch, W. Heimbrodt

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the kp method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In)As and Ga(As, Sb) quantum wells.

Original languageEnglish (US)
Article number204303
JournalJournal of Applied Physics
Volume120
Issue number20
DOIs
StatePublished - Nov 28 2016

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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