Behavior of GeSbTeBi phase-change optical recording media under subnanosecond pulsed laser irradiation

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We investigated the variations in reflectivity during the phase transition between amorphous and crystalline states of a Bi-doped GeTe-Sb 2Te3 pseudobinary compound film with subnanosecond laser pulses, using a pump-and-probe technique. We also used a two-laser static tester to estimate the onset time of crystallization under 2.0-μ.s pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in ∼1 ns, but that crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole in the phase-change film.

Original languageEnglish (US)
Pages (from-to)4033-4040
Number of pages8
JournalApplied optics
Issue number20
StatePublished - Jul 10 2004


ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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