Behavior of GeSbTeBi phase-change optical recording media under subnanosecond pulsed laser irradiation

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated the variations in reflectivity during the phase transition between amorphous and crystalline states of a Bi-doped GeTe-Sb 2Te3 pseudobinary compound film with subnanosecond laser pulses, using a pump-and-probe technique. We also used a two-laser static tester to estimate the onset time of crystallization under 2.0-μ.s pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in ∼1 ns, but that crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole in the phase-change film.

Original languageEnglish (US)
Pages (from-to)4033-4040
Number of pages8
JournalApplied Optics
Volume43
Issue number20
DOIs
StatePublished - Jul 10 2004

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Optical recording
Laser beam effects
Pulsed lasers
pulsed lasers
recording
irradiation
pulses
test equipment
Crystalline materials
lasers
Amorphization
crystallization
pumps
reflectance
heat
thresholds
probes
Laser pulses
estimates
Crystallization

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Behavior of GeSbTeBi phase-change optical recording media under subnanosecond pulsed laser irradiation. / Watabe, Kazuo; Polynkin, Pavel G; Mansuripur, Masud.

In: Applied Optics, Vol. 43, No. 20, 10.07.2004, p. 4033-4040.

Research output: Contribution to journalArticle

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