Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation

Research output: Contribution to journalConference article

Abstract

Reflectivity variations during phase-transition between amorphous and crystalline states of a Bi-doped GeTe-Sb2Te3 pseudo-binary compound film is investigated with sub-nanosecond laser pulses using a pump-and-probe technique. We also use a two-laser static tester to estimate the onset time of crystallization under a 2.0-μs-pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in about one nanosecond, but crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole on the phase-change film.

Original languageEnglish (US)
Pages (from-to)342-350
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5380
DOIs
StatePublished - Dec 20 2004
EventOptical Data Storage 2004 - Monterey, CA, United States
Duration: Apr 18 2004Apr 21 2004

Keywords

  • Amorphization
  • Crystallization
  • Phase-change recording
  • Pump and probe technique
  • Sub-nanosecond

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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