Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Reflectivity variations during phase-transition between amorphous and crystalline states of a Bi-doped GeTe-Sb2Te3 pseudo-binary compound film is investigated with sub-nanosecond laser pulses using a pump-and-probe technique. We also use a two-laser static tester to estimate the onset time of crystallization under a 2.0-μs-pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in about one nanosecond, but crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole on the phase-change film.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsB.V.K. Vijaya Kumar, H. Kobori
Pages342-350
Number of pages9
Volume5380
DOIs
StatePublished - 2004
EventOptical Data Storage 2004 - Monterey, CA, United States
Duration: Apr 18 2004Apr 21 2004

Other

OtherOptical Data Storage 2004
CountryUnited States
CityMonterey, CA
Period4/18/044/21/04

Fingerprint

Optical recording
Laser beam effects
Pulsed lasers
pulsed lasers
recording
irradiation
pulses
test equipment
Crystalline materials
lasers
Amorphization
crystallization
pumps
reflectance
heat
thresholds
probes
Laser pulses
estimates
Crystallization

Keywords

  • Amorphization
  • Crystallization
  • Phase-change recording
  • Pump and probe technique
  • Sub-nanosecond

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Watabe, K., Polynkin, P. G., & Mansuripur, M. (2004). Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation. In B. V. K. Vijaya Kumar, & H. Kobori (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5380, pp. 342-350) https://doi.org/10.1117/12.557067

Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation. / Watabe, Kazuo; Polynkin, Pavel G; Mansuripur, Masud.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / B.V.K. Vijaya Kumar; H. Kobori. Vol. 5380 2004. p. 342-350.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Watabe, K, Polynkin, PG & Mansuripur, M 2004, Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation. in BVK Vijaya Kumar & H Kobori (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5380, pp. 342-350, Optical Data Storage 2004, Monterey, CA, United States, 4/18/04. https://doi.org/10.1117/12.557067
Watabe K, Polynkin PG, Mansuripur M. Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation. In Vijaya Kumar BVK, Kobori H, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5380. 2004. p. 342-350 https://doi.org/10.1117/12.557067
Watabe, Kazuo ; Polynkin, Pavel G ; Mansuripur, Masud. / Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation. Proceedings of SPIE - The International Society for Optical Engineering. editor / B.V.K. Vijaya Kumar ; H. Kobori. Vol. 5380 2004. pp. 342-350
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