Behaviors of metallic contaminants in Si wafer processing

Joong S. Jeon, Stefan De Gandt, Srini Raghavan, Marcia Almanza-Workman, Cynthia Gonsalves, Bob Ogle

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

It was found that the levels of metallic contamination depend on the pH of solutions. The contamination levels of Co and Ni in SC2 are significantly lower than those in SC1 solutions. It was also found that metallic contaminants on Si surface diffuse into bulk or oxide during oxidation. For Fe and Co contaminated wafers, decreases in lifetimes were found, and they depend on contamination levels. On the other hand, for Ti and Ni wafers, lifetimes were not different from that for uncontaminated wafer. Interestingly, Fe influenced bulk lifetime rather than near surface lifetimes, while Ni and Co affected near surface lifetime.

Original languageEnglish (US)
Title of host publicationDiffusion and Defect Data Pt.B: Solid State Phenomena
PublisherScitec Publications Ltd.
Pages123-126
Number of pages4
Volume76-77
StatePublished - 2000
Event5th Internatinal Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) - Ostend, Belgium
Duration: Sep 18 2000Sep 20 2000

Other

Other5th Internatinal Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000)
CityOstend, Belgium
Period9/18/009/20/00

Fingerprint

contaminants
Contamination
wafers
Impurities
life (durability)
Processing
contamination
Oxides
Oxidation
oxidation
oxides
titanium nickelide

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Jeon, J. S., De Gandt, S., Raghavan, S., Almanza-Workman, M., Gonsalves, C., & Ogle, B. (2000). Behaviors of metallic contaminants in Si wafer processing. In Diffusion and Defect Data Pt.B: Solid State Phenomena (Vol. 76-77, pp. 123-126). Scitec Publications Ltd..

Behaviors of metallic contaminants in Si wafer processing. / Jeon, Joong S.; De Gandt, Stefan; Raghavan, Srini; Almanza-Workman, Marcia; Gonsalves, Cynthia; Ogle, Bob.

Diffusion and Defect Data Pt.B: Solid State Phenomena. Vol. 76-77 Scitec Publications Ltd., 2000. p. 123-126.

Research output: Chapter in Book/Report/Conference proceedingChapter

Jeon, JS, De Gandt, S, Raghavan, S, Almanza-Workman, M, Gonsalves, C & Ogle, B 2000, Behaviors of metallic contaminants in Si wafer processing. in Diffusion and Defect Data Pt.B: Solid State Phenomena. vol. 76-77, Scitec Publications Ltd., pp. 123-126, 5th Internatinal Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000), Ostend, Belgium, 9/18/00.
Jeon JS, De Gandt S, Raghavan S, Almanza-Workman M, Gonsalves C, Ogle B. Behaviors of metallic contaminants in Si wafer processing. In Diffusion and Defect Data Pt.B: Solid State Phenomena. Vol. 76-77. Scitec Publications Ltd. 2000. p. 123-126
Jeon, Joong S. ; De Gandt, Stefan ; Raghavan, Srini ; Almanza-Workman, Marcia ; Gonsalves, Cynthia ; Ogle, Bob. / Behaviors of metallic contaminants in Si wafer processing. Diffusion and Defect Data Pt.B: Solid State Phenomena. Vol. 76-77 Scitec Publications Ltd., 2000. pp. 123-126
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