Behaviors of metallic contaminants in Si wafer processing

Joong S. Jeon, Stefan De Gandt, Srini Raghavan, Marcia Almanza-Workman, Cynthia Gonsalves, Bob Ogle

Research output: Contribution to journalConference article

Abstract

It was found that the levels of metallic contamination depend on the pH of solutions. The contamination levels of Co and Ni in SC2 are significantly lower than those in SC1 solutions. It was also found that metallic contaminants on Si surface diffuse into bulk or oxide during oxidation. For Fe and Co contaminated wafers, decreases in lifetimes were found, and they depend on contamination levels. On the other hand, for Ti and Ni wafers, lifetimes were not different from that for uncontaminated wafer. Interestingly, Fe influenced bulk lifetime rather than near surface lifetimes, while Ni and Co affected near surface lifetime.

Original languageEnglish (US)
Pages (from-to)123-126
Number of pages4
JournalDiffusion and Defect Data Pt.B: Solid State Phenomena
Volume76-77
StatePublished - Dec 1 2000
Event5th Internatinal Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) - Ostend, Belgium
Duration: Sep 18 2000Sep 20 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Behaviors of metallic contaminants in Si wafer processing'. Together they form a unique fingerprint.

  • Cite this

    Jeon, J. S., De Gandt, S., Raghavan, S., Almanza-Workman, M., Gonsalves, C., & Ogle, B. (2000). Behaviors of metallic contaminants in Si wafer processing. Diffusion and Defect Data Pt.B: Solid State Phenomena, 76-77, 123-126.