Behaviors of metallic contaminants in Si wafer processing

Joong S. Jeon, Stefan De Gandt, Srini Raghavan, Marcia Almanza-Workman, Cynthia Gonsalves, Bob Ogle

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

It was found that the levels of metallic contamination depend on the pH of solutions. The contamination levels of Co and Ni in SC2 are significantly lower than those in SC 1 solutions. It was also found that metallic contaminants on Si surface diffuse into bulk or oxide during oxidation. For Fe and Co contaminated wafers, decreases in lifetimes were found, and they depend on contamination levels. On the other hand, for Ti and Ni wafers, lifetimes were not different from that for uncontaminated wafer. Interestingly, Fe influenced bulk lifetime rather than near surface lifetimes, while Ni and Co affected near surface lifetime.

Original languageEnglish (US)
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages123-126
Number of pages4
Volume76-77
ISBN (Print)9783908450573
DOIs
StatePublished - 2001
Event5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000 - Ostend, Belgium
Duration: Sep 18 2000Sep 20 2000

Publication series

NameSolid State Phenomena
Volume76-77
ISSN (Electronic)16629779

Other

Other5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000
CountryBelgium
CityOstend
Period9/18/009/20/00

Fingerprint

contaminants
Contamination
wafers
Impurities
life (durability)
Processing
contamination
Oxides
Oxidation
oxidation
oxides
titanium nickelide

Keywords

  • Co
  • Contamination
  • Fe
  • Lifetime
  • Metal
  • Ni
  • Oxide
  • Ti

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Jeon, J. S., De Gandt, S., Raghavan, S., Almanza-Workman, M., Gonsalves, C., & Ogle, B. (2001). Behaviors of metallic contaminants in Si wafer processing. In Solid State Phenomena (Vol. 76-77, pp. 123-126). (Solid State Phenomena; Vol. 76-77). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.76-77.123

Behaviors of metallic contaminants in Si wafer processing. / Jeon, Joong S.; De Gandt, Stefan; Raghavan, Srini; Almanza-Workman, Marcia; Gonsalves, Cynthia; Ogle, Bob.

Solid State Phenomena. Vol. 76-77 Trans Tech Publications Ltd, 2001. p. 123-126 (Solid State Phenomena; Vol. 76-77).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jeon, JS, De Gandt, S, Raghavan, S, Almanza-Workman, M, Gonsalves, C & Ogle, B 2001, Behaviors of metallic contaminants in Si wafer processing. in Solid State Phenomena. vol. 76-77, Solid State Phenomena, vol. 76-77, Trans Tech Publications Ltd, pp. 123-126, 5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000, Ostend, Belgium, 9/18/00. https://doi.org/10.4028/www.scientific.net/SSP.76-77.123
Jeon JS, De Gandt S, Raghavan S, Almanza-Workman M, Gonsalves C, Ogle B. Behaviors of metallic contaminants in Si wafer processing. In Solid State Phenomena. Vol. 76-77. Trans Tech Publications Ltd. 2001. p. 123-126. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.76-77.123
Jeon, Joong S. ; De Gandt, Stefan ; Raghavan, Srini ; Almanza-Workman, Marcia ; Gonsalves, Cynthia ; Ogle, Bob. / Behaviors of metallic contaminants in Si wafer processing. Solid State Phenomena. Vol. 76-77 Trans Tech Publications Ltd, 2001. pp. 123-126 (Solid State Phenomena).
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