Beyond the ABC: Carrier recombinations in semiconductor lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

31 Scopus citations

Abstract

It is demonstrated that fully microscopic many-body models are required for a correct description of the dominant carrier loss processes in semiconductor lasers, spontaneous emission and Auger recombination, and that they are able to quantitatively predict these losses. The density dependence of the losses assumed in semi-empirical approaches, J = AN + BN2 + CN3, is shown to break down already near transparency. For the spontaneous emission it is shown to decrease from quadratic to linear (BN), Auger rates are shown to increase only quadratically (CN2) or even less.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XIV
DOIs
StatePublished - May 22 2006
EventPhysics and Simulation of Optoelectronic Devices XIV - San Jose, CA, United States
Duration: Jan 22 2006Jan 26 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6115
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XIV
CountryUnited States
CitySan Jose, CA
Period1/22/061/26/06

Keywords

  • Gain
  • Photo luminescence
  • Semiconductor laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Beyond the ABC: Carrier recombinations in semiconductor lasers'. Together they form a unique fingerprint.

Cite this