Biexcitons in semiconductor quantum dots

Y. Z. Hu, Stephan W Koch, M. Lindberg, Nasser N Peyghambarian, E. L. Pollock, Farid F. Abraham

Research output: Contribution to journalArticle

238 Citations (Scopus)

Abstract

Theoretical and experimental results are reported which provide the first evidence for biexciton states in semiconductor quantum dots. The theory predicts an increasing biexciton binding energy with decreasing dot size. Unlike bulk semiconductors, quantum dots have excited biexciton states which are stable. These biexciton states are observed as pronounced induced absorption features on the high-energy side of the bleached exciton resonances in femtosecond and nanosecond pump-probe experiments of quantum dots in glass matrices.

Original languageEnglish (US)
Pages (from-to)1805-1807
Number of pages3
JournalPhysical Review Letters
Volume64
Issue number15
DOIs
StatePublished - 1990

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quantum dots
binding energy
excitons
pumps
probes
glass
matrices
excitation
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Biexcitons in semiconductor quantum dots. / Hu, Y. Z.; Koch, Stephan W; Lindberg, M.; Peyghambarian, Nasser N; Pollock, E. L.; Abraham, Farid F.

In: Physical Review Letters, Vol. 64, No. 15, 1990, p. 1805-1807.

Research output: Contribution to journalArticle

Hu, YZ, Koch, SW, Lindberg, M, Peyghambarian, NN, Pollock, EL & Abraham, FF 1990, 'Biexcitons in semiconductor quantum dots', Physical Review Letters, vol. 64, no. 15, pp. 1805-1807. https://doi.org/10.1103/PhysRevLett.64.1805
Hu, Y. Z. ; Koch, Stephan W ; Lindberg, M. ; Peyghambarian, Nasser N ; Pollock, E. L. ; Abraham, Farid F. / Biexcitons in semiconductor quantum dots. In: Physical Review Letters. 1990 ; Vol. 64, No. 15. pp. 1805-1807.
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