Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties

Zahida Batool, Sangam Chatterjee, Alexej Chernikov, Adam Duzik, Rafael Fritz, Chaturvedi Gogineni, Konstanze Hild, Thomas J.C. Hosea, Sebastian Imhof, Shane R. Johnson, Zenan Jiang, Shirong Jin, Martin Koch, Stephan W. Koch, Kolja Kolata, Ryan B. Lewis, Xianfeng Lu, Mostafa Masnadi-Shirazi, Joanna Mirecki Millunchick, Patricia M. MooneyNathaniel A. Riordan, Oleg Rubel, Stephen J. Sweeney, John C. Thomas, Angela Thränhardt, Thomas Tiedje, Kerstin Volz

Research output: Chapter in Book/Report/Conference proceedingChapter

8 Scopus citations
Original languageEnglish (US)
Title of host publicationMolecular Beam Epitaxy
PublisherElsevier Inc.
Pages139-158
Number of pages20
ISBN (Print)9780123878397
DOIs
StatePublished - Aug 29 2013

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Batool, Z., Chatterjee, S., Chernikov, A., Duzik, A., Fritz, R., Gogineni, C., Hild, K., Hosea, T. J. C., Imhof, S., Johnson, S. R., Jiang, Z., Jin, S., Koch, M., Koch, S. W., Kolata, K., Lewis, R. B., Lu, X., Masnadi-Shirazi, M., Millunchick, J. M., ... Volz, K. (2013). Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties. In Molecular Beam Epitaxy (pp. 139-158). Elsevier Inc.. https://doi.org/10.1016/B978-0-12-387839-7.00007-5