Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties

Zahida Batool, Sangam Chatterjee, Alexej Chernikov, Adam Duzik, Rafael Fritz, Chaturvedi Gogineni, Konstanze Hild, Thomas J C Hosea, Sebastian Imhof, Shane R. Johnson, Zenan Jiang, Shirong Jin, Martin Koch, Stephan W Koch, Kolja Kolata, Ryan B. Lewis, Xianfeng Lu, Mostafa Masnadi-Shirazi, Joanna Mirecki Millunchick, Patricia M. MooneyNathaniel A. Riordan, Oleg Rubel, Stephen J. Sweeney, John C. Thomas, Angela Thränhardt, Thomas Tiedje, Kerstin Volz

Research output: Chapter in Book/Report/Conference proceedingChapter

6 Citations (Scopus)
Original languageEnglish (US)
Title of host publicationMolecular Beam Epitaxy
PublisherElsevier Inc.
Pages139-158
Number of pages20
ISBN (Print)9780123878397
DOIs
StatePublished - 2013
Externally publishedYes

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Semiconductor growth
Bismuth
Epitaxial growth
Physical properties
III-V semiconductors

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Batool, Z., Chatterjee, S., Chernikov, A., Duzik, A., Fritz, R., Gogineni, C., ... Volz, K. (2013). Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties. In Molecular Beam Epitaxy (pp. 139-158). Elsevier Inc.. https://doi.org/10.1016/B978-0-12-387839-7.00007-5

Bismuth-containing III-V semiconductors : Epitaxial growth and physical properties. / Batool, Zahida; Chatterjee, Sangam; Chernikov, Alexej; Duzik, Adam; Fritz, Rafael; Gogineni, Chaturvedi; Hild, Konstanze; Hosea, Thomas J C; Imhof, Sebastian; Johnson, Shane R.; Jiang, Zenan; Jin, Shirong; Koch, Martin; Koch, Stephan W; Kolata, Kolja; Lewis, Ryan B.; Lu, Xianfeng; Masnadi-Shirazi, Mostafa; Millunchick, Joanna Mirecki; Mooney, Patricia M.; Riordan, Nathaniel A.; Rubel, Oleg; Sweeney, Stephen J.; Thomas, John C.; Thränhardt, Angela; Tiedje, Thomas; Volz, Kerstin.

Molecular Beam Epitaxy. Elsevier Inc., 2013. p. 139-158.

Research output: Chapter in Book/Report/Conference proceedingChapter

Batool, Z, Chatterjee, S, Chernikov, A, Duzik, A, Fritz, R, Gogineni, C, Hild, K, Hosea, TJC, Imhof, S, Johnson, SR, Jiang, Z, Jin, S, Koch, M, Koch, SW, Kolata, K, Lewis, RB, Lu, X, Masnadi-Shirazi, M, Millunchick, JM, Mooney, PM, Riordan, NA, Rubel, O, Sweeney, SJ, Thomas, JC, Thränhardt, A, Tiedje, T & Volz, K 2013, Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties. in Molecular Beam Epitaxy. Elsevier Inc., pp. 139-158. https://doi.org/10.1016/B978-0-12-387839-7.00007-5
Batool Z, Chatterjee S, Chernikov A, Duzik A, Fritz R, Gogineni C et al. Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties. In Molecular Beam Epitaxy. Elsevier Inc. 2013. p. 139-158 https://doi.org/10.1016/B978-0-12-387839-7.00007-5
Batool, Zahida ; Chatterjee, Sangam ; Chernikov, Alexej ; Duzik, Adam ; Fritz, Rafael ; Gogineni, Chaturvedi ; Hild, Konstanze ; Hosea, Thomas J C ; Imhof, Sebastian ; Johnson, Shane R. ; Jiang, Zenan ; Jin, Shirong ; Koch, Martin ; Koch, Stephan W ; Kolata, Kolja ; Lewis, Ryan B. ; Lu, Xianfeng ; Masnadi-Shirazi, Mostafa ; Millunchick, Joanna Mirecki ; Mooney, Patricia M. ; Riordan, Nathaniel A. ; Rubel, Oleg ; Sweeney, Stephen J. ; Thomas, John C. ; Thränhardt, Angela ; Tiedje, Thomas ; Volz, Kerstin. / Bismuth-containing III-V semiconductors : Epitaxial growth and physical properties. Molecular Beam Epitaxy. Elsevier Inc., 2013. pp. 139-158
@inbook{09af49b127ec42879db200b1103f1ded,
title = "Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties",
author = "Zahida Batool and Sangam Chatterjee and Alexej Chernikov and Adam Duzik and Rafael Fritz and Chaturvedi Gogineni and Konstanze Hild and Hosea, {Thomas J C} and Sebastian Imhof and Johnson, {Shane R.} and Zenan Jiang and Shirong Jin and Martin Koch and Koch, {Stephan W} and Kolja Kolata and Lewis, {Ryan B.} and Xianfeng Lu and Mostafa Masnadi-Shirazi and Millunchick, {Joanna Mirecki} and Mooney, {Patricia M.} and Riordan, {Nathaniel A.} and Oleg Rubel and Sweeney, {Stephen J.} and Thomas, {John C.} and Angela Thr{\"a}nhardt and Thomas Tiedje and Kerstin Volz",
year = "2013",
doi = "10.1016/B978-0-12-387839-7.00007-5",
language = "English (US)",
isbn = "9780123878397",
pages = "139--158",
booktitle = "Molecular Beam Epitaxy",
publisher = "Elsevier Inc.",

}

TY - CHAP

T1 - Bismuth-containing III-V semiconductors

T2 - Epitaxial growth and physical properties

AU - Batool, Zahida

AU - Chatterjee, Sangam

AU - Chernikov, Alexej

AU - Duzik, Adam

AU - Fritz, Rafael

AU - Gogineni, Chaturvedi

AU - Hild, Konstanze

AU - Hosea, Thomas J C

AU - Imhof, Sebastian

AU - Johnson, Shane R.

AU - Jiang, Zenan

AU - Jin, Shirong

AU - Koch, Martin

AU - Koch, Stephan W

AU - Kolata, Kolja

AU - Lewis, Ryan B.

AU - Lu, Xianfeng

AU - Masnadi-Shirazi, Mostafa

AU - Millunchick, Joanna Mirecki

AU - Mooney, Patricia M.

AU - Riordan, Nathaniel A.

AU - Rubel, Oleg

AU - Sweeney, Stephen J.

AU - Thomas, John C.

AU - Thränhardt, Angela

AU - Tiedje, Thomas

AU - Volz, Kerstin

PY - 2013

Y1 - 2013

UR - http://www.scopus.com/inward/record.url?scp=84883949591&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883949591&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-387839-7.00007-5

DO - 10.1016/B978-0-12-387839-7.00007-5

M3 - Chapter

AN - SCOPUS:84883949591

SN - 9780123878397

SP - 139

EP - 158

BT - Molecular Beam Epitaxy

PB - Elsevier Inc.

ER -