Brush Scrubbing for Post-CMP Cleaning

Ting Sun, Zhenxing Han, Manish Keswani

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Scopus citations

Abstract

To achieve a defect-free wafer surface, slurry residuals and other contaminants are required to be removed after a chemical mechanical planarization (CMP) process. Brush scrubbing, a process based on direct contact between a soft polyvinyl alcohol (PVA) brush and the wafer surface is widely accepted in post-CMP cleaning due to process flexibility, single-wafer processing configuration, and reduced cost of ownership. Researches have shown that the cleaning performance of the brush scrubbing process depends on the cleaning chemistry, tool kinematics, and properties of PVA brushes. This chapter reviews and summarizes current and past work on brush scrubbing and discusses the important aspects of cleaning mechanism, tool kinematics, and consumables.

Original languageEnglish (US)
Title of host publicationMethods for Surface Cleaning
PublisherElsevier Inc.
Pages109-133
Number of pages25
Volume9
ISBN (Electronic)9780323431729
ISBN (Print)9780323431576
DOIs
StatePublished - Jan 1 2017

Keywords

  • Brush scrubbing
  • Cleaning chemistry
  • PVA brush
  • Post-CMP cleaning
  • Tool kinematics

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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  • Cite this

    Sun, T., Han, Z., & Keswani, M. (2017). Brush Scrubbing for Post-CMP Cleaning. In Methods for Surface Cleaning (Vol. 9, pp. 109-133). Elsevier Inc.. https://doi.org/10.1016/B978-0-323-43157-6.00004-5