Buckling of polysilicon microbeams during sacrificial layer removal

Tong Yi Zhang, Xin Zhang, Yitshak Zohar

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

In situ observations of buckling evolution of polysilicon microbeams during etch of the underneath sacrificial layer were carried out under an optical microscope. The surface geometry was obtained by AFM measurements. As the etching progressed, three buckling patterns were identified. Closed formulas were derived from theoretical analysis based on both boundary conditions: simply supported and clamped. The theory predicts either the buckling pattern for a given residual stress or the compressive stress level for a given buckling pattern. The residual stress evaluated from the buckling pattern agrees with that measured by the curvature method.

Original languageEnglish (US)
Pages (from-to)243-249
Number of pages7
JournalJournal of Micromechanics and Microengineering
Volume8
Issue number3
DOIs
StatePublished - Sep 1998
Externally publishedYes

Fingerprint

microbeams
buckling
Polysilicon
Buckling
residual stress
Residual stresses
surface geometry
optical microscopes
Compressive stress
Etching
Microscopes
curvature
etching
Boundary conditions
atomic force microscopy
boundary conditions
Geometry

ASJC Scopus subject areas

  • Instrumentation
  • Materials Science(all)
  • Mechanics of Materials
  • Computational Mechanics

Cite this

Buckling of polysilicon microbeams during sacrificial layer removal. / Zhang, Tong Yi; Zhang, Xin; Zohar, Yitshak.

In: Journal of Micromechanics and Microengineering, Vol. 8, No. 3, 09.1998, p. 243-249.

Research output: Contribution to journalArticle

@article{3b5e2b0295ce469fb44e1be20a457305,
title = "Buckling of polysilicon microbeams during sacrificial layer removal",
abstract = "In situ observations of buckling evolution of polysilicon microbeams during etch of the underneath sacrificial layer were carried out under an optical microscope. The surface geometry was obtained by AFM measurements. As the etching progressed, three buckling patterns were identified. Closed formulas were derived from theoretical analysis based on both boundary conditions: simply supported and clamped. The theory predicts either the buckling pattern for a given residual stress or the compressive stress level for a given buckling pattern. The residual stress evaluated from the buckling pattern agrees with that measured by the curvature method.",
author = "Zhang, {Tong Yi} and Xin Zhang and Yitshak Zohar",
year = "1998",
month = "9",
doi = "10.1088/0960-1317/8/3/011",
language = "English (US)",
volume = "8",
pages = "243--249",
journal = "Journal of Micromechanics and Microengineering",
issn = "0960-1317",
publisher = "IOP Publishing Ltd.",
number = "3",

}

TY - JOUR

T1 - Buckling of polysilicon microbeams during sacrificial layer removal

AU - Zhang, Tong Yi

AU - Zhang, Xin

AU - Zohar, Yitshak

PY - 1998/9

Y1 - 1998/9

N2 - In situ observations of buckling evolution of polysilicon microbeams during etch of the underneath sacrificial layer were carried out under an optical microscope. The surface geometry was obtained by AFM measurements. As the etching progressed, three buckling patterns were identified. Closed formulas were derived from theoretical analysis based on both boundary conditions: simply supported and clamped. The theory predicts either the buckling pattern for a given residual stress or the compressive stress level for a given buckling pattern. The residual stress evaluated from the buckling pattern agrees with that measured by the curvature method.

AB - In situ observations of buckling evolution of polysilicon microbeams during etch of the underneath sacrificial layer were carried out under an optical microscope. The surface geometry was obtained by AFM measurements. As the etching progressed, three buckling patterns were identified. Closed formulas were derived from theoretical analysis based on both boundary conditions: simply supported and clamped. The theory predicts either the buckling pattern for a given residual stress or the compressive stress level for a given buckling pattern. The residual stress evaluated from the buckling pattern agrees with that measured by the curvature method.

UR - http://www.scopus.com/inward/record.url?scp=0032164543&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032164543&partnerID=8YFLogxK

U2 - 10.1088/0960-1317/8/3/011

DO - 10.1088/0960-1317/8/3/011

M3 - Article

AN - SCOPUS:0032164543

VL - 8

SP - 243

EP - 249

JO - Journal of Micromechanics and Microengineering

JF - Journal of Micromechanics and Microengineering

SN - 0960-1317

IS - 3

ER -