Buckling of polysilicon microbeams during sacrificial layer removal

Tong Yi Zhang, Xin Zhang, Yitshak Zohar

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

In situ observations of buckling evolution of polysilicon microbeams during etch of the underneath sacrificial layer were carried out under an optical microscope. The surface geometry was obtained by AFM measurements. As the etching progressed, three buckling patterns were identified. Closed formulas were derived from theoretical analysis based on both boundary conditions: simply supported and clamped. The theory predicts either the buckling pattern for a given residual stress or the compressive stress level for a given buckling pattern. The residual stress evaluated from the buckling pattern agrees with that measured by the curvature method.

Original languageEnglish (US)
Pages (from-to)243-249
Number of pages7
JournalJournal of Micromechanics and Microengineering
Volume8
Issue number3
DOIs
StatePublished - Sep 1 1998
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Buckling of polysilicon microbeams during sacrificial layer removal'. Together they form a unique fingerprint.

  • Cite this