Calculation of the intensity-dependent changes of the index of refraction in GaAS

S. W. Koch; S. Schmitt-Rink; H. Haug

doi:10.1016/0038-1098(81)90009-0

Calculation of the intensity-dependent changes of the index of refraction in GaAS

S. W. Koch, S. Schmitt-Rink, H. Haug

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In order to explain the recently observed optical bistability in GaAs we calculate the intensity-dependent changes of the index of refraction on the basis of the previously developed many-body theory of the gain and absorption spectra of highly excited direct-gap semiconductors.

Original language	English (US)
Pages (from-to)	1023-1026
Number of pages	4
Journal	Solid State Communications
Volume	38
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(81)90009-0
State	Published - Jun 1981

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "Calculation of the intensity-dependent changes of the index of refraction in GaAS",

abstract = "In order to explain the recently observed optical bistability in GaAs we calculate the intensity-dependent changes of the index of refraction on the basis of the previously developed many-body theory of the gain and absorption spectra of highly excited direct-gap semiconductors.",

author = "Koch, {S. W.} and S. Schmitt-Rink and H. Haug",

year = "1981",

month = jun,

doi = "10.1016/0038-1098(81)90009-0",

language = "English (US)",

volume = "38",

pages = "1023--1026",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

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T1 - Calculation of the intensity-dependent changes of the index of refraction in GaAS

AU - Koch, S. W.

AU - Schmitt-Rink, S.

AU - Haug, H.

PY - 1981/6

Y1 - 1981/6

N2 - In order to explain the recently observed optical bistability in GaAs we calculate the intensity-dependent changes of the index of refraction on the basis of the previously developed many-body theory of the gain and absorption spectra of highly excited direct-gap semiconductors.

AB - In order to explain the recently observed optical bistability in GaAs we calculate the intensity-dependent changes of the index of refraction on the basis of the previously developed many-body theory of the gain and absorption spectra of highly excited direct-gap semiconductors.

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U2 - 10.1016/0038-1098(81)90009-0

DO - 10.1016/0038-1098(81)90009-0

M3 - Article

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VL - 38

SP - 1023

EP - 1026

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 11

ER -