Calculation of the intensity-dependent changes of the index of refraction in GaAS

Stephan W Koch, S. Schmitt-Rink, H. Haug

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In order to explain the recently observed optical bistability in GaAs we calculate the intensity-dependent changes of the index of refraction on the basis of the previously developed many-body theory of the gain and absorption spectra of highly excited direct-gap semiconductors.

Original languageEnglish (US)
Pages (from-to)1023-1026
Number of pages4
JournalSolid State Communications
Volume38
Issue number11
DOIs
Publication statusPublished - 1981
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this