Abstract
In order to explain the recently observed optical bistability in GaAs we calculate the intensity-dependent changes of the index of refraction on the basis of the previously developed many-body theory of the gain and absorption spectra of highly excited direct-gap semiconductors.
Original language | English (US) |
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Pages (from-to) | 1023-1026 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 38 |
Issue number | 11 |
DOIs | |
State | Published - Jun 1981 |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry