Calculation of the intensity-dependent changes of the index of refraction in GaAS

S. W. Koch, S. Schmitt-Rink, H. Haug

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In order to explain the recently observed optical bistability in GaAs we calculate the intensity-dependent changes of the index of refraction on the basis of the previously developed many-body theory of the gain and absorption spectra of highly excited direct-gap semiconductors.

Original languageEnglish (US)
Pages (from-to)1023-1026
Number of pages4
JournalSolid State Communications
Volume38
Issue number11
DOIs
StatePublished - Jun 1981

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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