Abstract
In order to explain the recently observed optical bistability in GaAs we calculate the intensity-dependent changes of the index of refraction on the basis of the previously developed many-body theory of the gain and absorption spectra of highly excited direct-gap semiconductors.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1023-1026 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 38 |
| Issue number | 11 |
| DOIs | |
| State | Published - Jun 1981 |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
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Cite this
Koch, S. W., Schmitt-Rink, S., & Haug, H. (1981). Calculation of the intensity-dependent changes of the index of refraction in GaAS. Solid State Communications, 38(11), 1023-1026. https://doi.org/10.1016/0038-1098(81)90009-0