Carrier capture times in 1.3 μm materials

GaInNAs, InGaAsP and InGaAlAs semiconductor quantum-well lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A fully microscopic model is used to calculate the carrier capture times in quantum-well lasers operating at wavelengths in the 1.3 μm regime. The capture times are shown to be crucially dependent on the carrier confinement and therefore on the well and barrier materials. For a common well width of 6 nm the capture times in InP/InGaAlAs and InP/InGaAsP structures are found to be in the 5 ps range, whereas about a factor of ten longer times are predicted in GaInNAs/GaAs. By lowering the barriers using GaInNAs instead of pure GaAs or widening the well capture times similar to those in the InP-based structures can be obtained in the GaInNAs-based structure.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsR.H. Binder, P. Blood, M. Osinski, Y. Arakawa
Pages287-292
Number of pages6
Volume4646
DOIs
StatePublished - 2002
EventPhysics and Simulation of Optoelectronic Devices X - San Jose, CA, United States
Duration: Jan 21 2002Jan 25 2002

Other

OtherPhysics and Simulation of Optoelectronic Devices X
CountryUnited States
CitySan Jose, CA
Period1/21/021/25/02

Fingerprint

Quantum well lasers
quantum well lasers
Semiconductor quantum wells
semiconductor lasers
Wavelength
wavelengths

Keywords

  • Carrier dynamics
  • InGaAlAs
  • InGaAsP
  • Semiconductor laser
  • Threshold GaInAs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Hader, J., Moloney, J. V., & Koch, S. W. (2002). Carrier capture times in 1.3 μm materials: GaInNAs, InGaAsP and InGaAlAs semiconductor quantum-well lasers. In R. H. Binder, P. Blood, M. Osinski, & Y. Arakawa (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4646, pp. 287-292) https://doi.org/10.1117/12.470527

Carrier capture times in 1.3 μm materials : GaInNAs, InGaAsP and InGaAlAs semiconductor quantum-well lasers. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / R.H. Binder; P. Blood; M. Osinski; Y. Arakawa. Vol. 4646 2002. p. 287-292.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Moloney, JV & Koch, SW 2002, Carrier capture times in 1.3 μm materials: GaInNAs, InGaAsP and InGaAlAs semiconductor quantum-well lasers. in RH Binder, P Blood, M Osinski & Y Arakawa (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4646, pp. 287-292, Physics and Simulation of Optoelectronic Devices X, San Jose, CA, United States, 1/21/02. https://doi.org/10.1117/12.470527
Hader J, Moloney JV, Koch SW. Carrier capture times in 1.3 μm materials: GaInNAs, InGaAsP and InGaAlAs semiconductor quantum-well lasers. In Binder RH, Blood P, Osinski M, Arakawa Y, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4646. 2002. p. 287-292 https://doi.org/10.1117/12.470527
Hader, Jorg ; Moloney, Jerome V ; Koch, Stephan W. / Carrier capture times in 1.3 μm materials : GaInNAs, InGaAsP and InGaAlAs semiconductor quantum-well lasers. Proceedings of SPIE - The International Society for Optical Engineering. editor / R.H. Binder ; P. Blood ; M. Osinski ; Y. Arakawa. Vol. 4646 2002. pp. 287-292
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