Carrier capture times in 1.3 μm materials: GaInNAs, InGaAsP and InGaAlAs semiconductor quantum-well lasers

Research output: Contribution to journalConference article

Abstract

A fully microscopic model is used to calculate the carrier capture times in quantum-well lasers operating at wavelengths in the 1.3 μm regime. The capture times are shown to be crucially dependent on the carrier confinement and therefore on the well and barrier materials. For a common well width of 6 nm the capture times in InP/InGaAlAs and InP/InGaAsP structures are found to be in the 5 ps range, whereas about a factor of ten longer times are predicted in GaInNAs/GaAs. By lowering the barriers using GaInNAs instead of pure GaAs or widening the well capture times similar to those in the InP-based structures can be obtained in the GaInNAs-based structure.

Original languageEnglish (US)
Pages (from-to)287-292
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4646
DOIs
StatePublished - Jan 1 2002
EventPhysics and Simulation of Optoelectronic Devices X - San Jose, CA, United States
Duration: Jan 21 2002Jan 25 2002

Keywords

  • Carrier dynamics
  • InGaAlAs
  • InGaAsP
  • Semiconductor laser
  • Threshold GaInAs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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