Carrier correlation effects in a quantum-well semiconductor laser medium

W. W. Chow, A. Knorr, S. Hughes, A. Girndt, S. W. Koch

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


This paper describes the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure. The approach uses the Semiconductor Maxwell Bloch equations to describe the interaction between the carriers and the laser field, in the presence of many-body Coulomb interactions. Coulomb correlation effects are treated at the level of quantum kinetic theory in the Markovian limit. This approach shows the presence of nondiagonal Coulomb correlation contributions, in addition to the familiar diagonal contributions giving rise to polarization dephasing.

Original languageEnglish (US)
Pages (from-to)136-141
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number2
StatePublished - Apr 1997


  • Collision processes
  • Quantum theory
  • Quantum-well lasers
  • Semiconductor device modeling
  • Semiconductor lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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