Carrier dephasing in the gain region of an inverted semiconductor

K. Meissner, B. Fluegel, H. Giessen, G. Mohs, R. Binder, S. W. Koch, N. Peyghambarian

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

The polarization dephasing time has been measured across the gain region, at the transparency point, and into the absorption region of an optically excited GaAs multiple-quantum-well sample using spectral hole burning and degenerate four-wave mixing techniques. We observe strongly energy-dependent dephasing rates with a minimum at the crossover from gain to absorption. Numerical results for the microscopically calculated carrier-carrier scattering rates for a two-component electron-hole plasma in quantum wells show fair agreement with the experimental findings.

Original languageEnglish (US)
Pages (from-to)17647-17650
Number of pages4
JournalPhysical Review B
Volume50
Issue number23
DOIs
StatePublished - Jan 1 1994

ASJC Scopus subject areas

  • Condensed Matter Physics

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