Carrier dephasing in the gain region of an inverted semiconductor

K. Meissner, B. Fluegel, H. Giessen, G. Mohs, Rudolf Binder, Stephan W Koch, Nasser N Peyghambarian

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Abstract

The polarization dephasing time has been measured across the gain region, at the transparency point, and into the absorption region of an optically excited GaAs multiple-quantum-well sample using spectral hole burning and degenerate four-wave mixing techniques. We observe strongly energy-dependent dephasing rates with a minimum at the crossover from gain to absorption. Numerical results for the microscopically calculated carrier-carrier scattering rates for a two-component electron-hole plasma in quantum wells show fair agreement with the experimental findings.

Original languageEnglish (US)
Pages (from-to)17647-17650
Number of pages4
JournalPhysical Review B
Volume50
Issue number23
DOIs
Publication statusPublished - 1994

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ASJC Scopus subject areas

  • Condensed Matter Physics

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