Carrier dynamics in quantum well lasers

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A fully microscopic theory is used to perform an analysis of carrier-carrier and carrier-LO phonon scattering in semiconductor quantum wells, focussing on the high-density case relevant for laser structures. A large variance of scattering times is observed depending on the material parameters, apparently contradicting popular belief in some cases. For instance, carrier-carrier scattering may slow down when the carrier density is increased. Electron-hole scattering times are found to be on the same order of magnitude as carrier-phonon scattering, making the introduction of a separate electron and hole temperature necessary. Heating by optical pumping is investigated and plasma cooling is shown to be possible by optical pumping of the laser structure.

Original languageEnglish (US)
Pages (from-to)361-368
Number of pages8
JournalOptical and Quantum Electronics
Volume38
Issue number4-6
DOIs
StatePublished - Mar 1 2006

Keywords

  • Carrier scattering
  • Dilute nitrides
  • Microscopic gain calculation
  • Nonequilibrium laser theory
  • Optical cooling
  • Quantum well lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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