Carrier-phonon coupling in GaAs 1xBi x/GaAs quantum wells

A. Chernikov, V. Bornwasser, M. Koch, Stephan W Koch, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, S. Chatterjee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The phonon-assisted emission of GaAs 1 xBi x quantum wells with Bi concentrations up to x=0.055 is investigated by continuous-wave photoluminescence as a function of lattice temperature and excitation density. Strong carrier-phonon coupling is observed manifesting itself in a Huang-Rhys factor of up to 0.3 depending on the lattice temperature and Bi content. Carriers bound to Bi-clusters are identified to be the origin of the efficient carrier-phonon scattering.

Original languageEnglish (US)
Article number085012
JournalSemiconductor Science and Technology
Volume27
Issue number8
DOIs
StatePublished - Aug 2012
Externally publishedYes

Fingerprint

Semiconductor quantum wells
quantum wells
Phonon scattering
Photoluminescence
Temperature
continuous radiation
photoluminescence
temperature
scattering
excitation
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Chernikov, A., Bornwasser, V., Koch, M., Koch, S. W., Lu, X., Johnson, S. R., ... Chatterjee, S. (2012). Carrier-phonon coupling in GaAs 1xBi x/GaAs quantum wells. Semiconductor Science and Technology, 27(8), [085012]. https://doi.org/10.1088/0268-1242/27/8/085012

Carrier-phonon coupling in GaAs 1xBi x/GaAs quantum wells. / Chernikov, A.; Bornwasser, V.; Koch, M.; Koch, Stephan W; Lu, X.; Johnson, S. R.; Beaton, D. A.; Tiedje, T.; Chatterjee, S.

In: Semiconductor Science and Technology, Vol. 27, No. 8, 085012, 08.2012.

Research output: Contribution to journalArticle

Chernikov, A, Bornwasser, V, Koch, M, Koch, SW, Lu, X, Johnson, SR, Beaton, DA, Tiedje, T & Chatterjee, S 2012, 'Carrier-phonon coupling in GaAs 1xBi x/GaAs quantum wells', Semiconductor Science and Technology, vol. 27, no. 8, 085012. https://doi.org/10.1088/0268-1242/27/8/085012
Chernikov, A. ; Bornwasser, V. ; Koch, M. ; Koch, Stephan W ; Lu, X. ; Johnson, S. R. ; Beaton, D. A. ; Tiedje, T. ; Chatterjee, S. / Carrier-phonon coupling in GaAs 1xBi x/GaAs quantum wells. In: Semiconductor Science and Technology. 2012 ; Vol. 27, No. 8.
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