Abstract
Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers, It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, JSE = BN2, and Auger, JAuger = +C N 3, is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities.
| Original language | English (US) |
|---|---|
| Title of host publication | 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 |
| Pages | 39-40 |
| Number of pages | 2 |
| DOIs | |
| State | Published - 2006 |
| Event | 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 - Nanyang, Singapore Duration: Sep 11 2006 → Sep 14 2006 |
Other
| Other | 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 |
|---|---|
| Country | Singapore |
| City | Nanyang |
| Period | 9/11/06 → 9/14/06 |
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ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering
Cite this
Carrier recombination in semiconductor lasers : Beyond the ABC. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W; Fan, L.; Fallahit, M.
2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06. 2006. p. 39-40 4098770.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Carrier recombination in semiconductor lasers
T2 - Beyond the ABC
AU - Hader, Jorg
AU - Moloney, Jerome V
AU - Koch, Stephan W
AU - Fan, L.
AU - Fallahit, M.
PY - 2006
Y1 - 2006
N2 - Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers, It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, JSE = BN2, and Auger, JAuger = +C N 3, is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities.
AB - Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers, It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, JSE = BN2, and Auger, JAuger = +C N 3, is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities.
UR - http://www.scopus.com/inward/record.url?scp=42649121331&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=42649121331&partnerID=8YFLogxK
U2 - 10.1109/NUSOD.2006.306730
DO - 10.1109/NUSOD.2006.306730
M3 - Conference contribution
AN - SCOPUS:42649121331
SN - 078039755X
SN - 9780780397552
SP - 39
EP - 40
BT - 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
ER -