TY - GEN
T1 - Carrier recombination in semiconductor lasers
T2 - 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
AU - Hader, J.
AU - Moloney, J. V.
AU - Koch, S. W.
AU - Fan, L.
AU - Fallahit, M.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers, It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, JSE = BN2, and Auger, JAuger = +C N 3, is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities.
AB - Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers, It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, JSE = BN2, and Auger, JAuger = +C N 3, is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities.
UR - http://www.scopus.com/inward/record.url?scp=42649121331&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=42649121331&partnerID=8YFLogxK
U2 - 10.1109/NUSOD.2006.306730
DO - 10.1109/NUSOD.2006.306730
M3 - Conference contribution
AN - SCOPUS:42649121331
SN - 078039755X
SN - 9780780397552
T3 - 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
SP - 39
EP - 40
BT - 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Y2 - 11 September 2006 through 14 September 2006
ER -