Carrier recombination in semiconductor lasers: Beyond the ABC

J. Hader; J. V. Moloney; S. W. Koch; L. Fan; M. Fallahit

doi:10.1109/NUSOD.2006.306730

Carrier recombination in semiconductor lasers: Beyond the ABC

J. Hader, J. V. Moloney, S. W. Koch, L. Fan, M. Fallahit

Optical Sciences, College of

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers, It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, J_SE = BN², and Auger, J_Auger = +C N ³, is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities.

Original language	English (US)
Title of host publication	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Pages	39-40
Number of pages	2
DOIs	https://doi.org/10.1109/NUSOD.2006.306730
State	Published - Dec 1 2006
Event	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 - Nanyang, Singapore Duration: Sep 11 2006 → Sep 14 2006

Publication series

Name	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06

Other

Other	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Country	Singapore
City	Nanyang
Period	9/11/06 → 9/14/06

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/NUSOD.2006.306730

Fingerprint Dive into the research topics of 'Carrier recombination in semiconductor lasers: Beyond the ABC'. Together they form a unique fingerprint.

Cite this

Hader, J., Moloney, J. V., Koch, S. W., Fan, L., & Fallahit, M. (2006). Carrier recombination in semiconductor lasers: Beyond the ABC. In 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 (pp. 39-40). [4098770] (2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06). https://doi.org/10.1109/NUSOD.2006.306730

Carrier recombination in semiconductor lasers : Beyond the ABC. / Hader, J.; Moloney, J. V.; Koch, S. W.; Fan, L.; Fallahit, M.

2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06. 2006. p. 39-40 4098770 (2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hader, J , Moloney, JV , Koch, SW, Fan, L & Fallahit, M 2006, Carrier recombination in semiconductor lasers: Beyond the ABC. in 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06., 4098770, 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06, pp. 39-40, 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06, Nanyang, Singapore, 9/11/06. https://doi.org/10.1109/NUSOD.2006.306730

Hader J , Moloney JV , Koch SW, Fan L, Fallahit M. Carrier recombination in semiconductor lasers: Beyond the ABC. In 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06. 2006. p. 39-40. 4098770. (2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06). https://doi.org/10.1109/NUSOD.2006.306730

@inproceedings{2724e21a06f34a52bf04cb7636f12848,

title = "Carrier recombination in semiconductor lasers: Beyond the ABC",

abstract = "Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers, It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, JSE = BN2, and Auger, JAuger = +C N 3, is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities.",

author = "J. Hader and Moloney, {J. V.} and Koch, {S. W.} and L. Fan and M. Fallahit",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/NUSOD.2006.306730",

language = "English (US)",

isbn = "078039755X",

series = "2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06",

pages = "39--40",

booktitle = "2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06",

note = "2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 ; Conference date: 11-09-2006 Through 14-09-2006",

}

TY - GEN

T1 - Carrier recombination in semiconductor lasers

T2 - 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

AU - Fan, L.

AU - Fallahit, M.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers, It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, JSE = BN2, and Auger, JAuger = +C N 3, is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities.

AB - Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers, It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, JSE = BN2, and Auger, JAuger = +C N 3, is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities.

UR - http://www.scopus.com/inward/record.url?scp=42649121331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42649121331&partnerID=8YFLogxK

U2 - 10.1109/NUSOD.2006.306730

DO - 10.1109/NUSOD.2006.306730

M3 - Conference contribution

AN - SCOPUS:42649121331

SN - 078039755X

SN - 9780780397552

T3 - 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06

SP - 39

EP - 40

BT - 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06

Y2 - 11 September 2006 through 14 September 2006

ER -