Carrier recombination in semiconductor lasers: Beyond the ABC

J. Hader, J. V. Moloney, S. W. Koch, L. Fan, M. Fallahit

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers, It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, JSE = BN2, and Auger, JAuger = +C N 3, is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities.

Original languageEnglish (US)
Title of host publication2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Pages39-40
Number of pages2
DOIs
StatePublished - Dec 1 2006
Event2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 - Nanyang, Singapore
Duration: Sep 11 2006Sep 14 2006

Publication series

Name2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06

Other

Other2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
CountrySingapore
CityNanyang
Period9/11/069/14/06

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ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Hader, J., Moloney, J. V., Koch, S. W., Fan, L., & Fallahit, M. (2006). Carrier recombination in semiconductor lasers: Beyond the ABC. In 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 (pp. 39-40). [4098770] (2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06). https://doi.org/10.1109/NUSOD.2006.306730