Carrier-wave Rabi flopping: Role of the carrier-envelope phase

Oliver D. Mücke, Thorsten Tritschler, Martin Wegener, Uwe Morgner, Franz X. Kärtner, Galina Khitrova, Hyatt M. Gibbs

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Abstract

Recently, a dependence of Rabi flopping on the carrier-envelope phase of the exciting laser pulses was predicted theoretically [Phys. Rev. Lett. 89, 127401 (2002)] for excitation of a thin semiconductor film with intense few-cycle pulses. Here, we report corresponding experiments on 50-100-nm thin GaAs films excited with 5-fs pulses. We find a dependence on the carrier-envelope phase arising from the interference of sidebands from the fundamental or the third-harmonic Mollow triplet, respectively, with surface second-harmonic generation.

Original languageEnglish (US)
Pages (from-to)2160-2162
Number of pages3
JournalOptics letters
Volume29
Issue number18
DOIs
StatePublished - Sep 15 2004

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Mücke, O. D., Tritschler, T., Wegener, M., Morgner, U., Kärtner, F. X., Khitrova, G., & Gibbs, H. M. (2004). Carrier-wave Rabi flopping: Role of the carrier-envelope phase. Optics letters, 29(18), 2160-2162. https://doi.org/10.1364/OL.29.002160