Chalcopyrite/Si heterojunctions for photovoltaic applications

O. Akpa, S. Shoieb, T. Thompson, T. Isaacs-Smith, P. Anderson, Supapan Seraphin, K. Das

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Films of CuInSe 2 (CIS) and CuGaSe 2 (CGS) were deposited on (100) Si by radiofrequency (RF) magnetron sputtering from stoichiometric CIS and CGS targets. Rutherford backscattering (RBS) analysis yielded a composition of Cu 0.8In 1.1Se 1.9 for CuInSe 2, which indicates that these films were Cu and Se poor. A composition of Cu 0.3Ga 1.5Se 2.0 for CuGaSe 2 shows Ga-rich and Cu-poor layers. Transmission electron microscopy (TEM) of cross-sectional samples established that the films were polycrystalline in nature and free of pinhole defects that normally short-circuit devices fabricated on glass with submicron absorber layers. From the electron and x-ray diffraction patterns, tetragonal chalcopyrite phases of the material were identified. Circular diodes, with a diameter between 100 μm and 400 μm, were fabricated on the grown films with a common Au back-contact. Diodes on both CIS and CGS films exhibited rectifying characteristics. From the polarity corresponding to the high and low currents, it was inferred that the grown films were p-type. These diodes exhibited photovoltaic response, and the forward-bias current increased by as much as two orders of magnitude when illuminated by a 75-W halogen lamp. The open-circuit voltages (V OC) for these devices are expected to approach the turn-on voltage of the diodes, 0.5 V and 0.7 V, for the CGS/Si and the CIS/Si heterojunctions, respectively. Shunting caused by degenerate phases present in the CGS film is believed to have resulted in the observed lower turn-on voltage for the CGS/n-Si heterojunction diode.

Original languageEnglish (US)
Pages (from-to)2462-2466
Number of pages5
JournalJournal of Electronic Materials
Volume39
Issue number11
DOIs
StatePublished - Nov 2010

Fingerprint

Heterojunctions
heterojunctions
Diodes
diodes
Halogens
Bias currents
short circuits
Rutherford backscattering spectroscopy
Electric potential
electric potential
Open circuit voltage
pinholes
low currents
chalcopyrite
open circuit voltage
Chemical analysis
Electric lamps
Short circuit currents
Magnetron sputtering
halogens

Keywords

  • Chalcopyrite
  • CuGaSe
  • CuInSe
  • Heterojunction
  • Photovoltaic
  • Sputtering

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Akpa, O., Shoieb, S., Thompson, T., Isaacs-Smith, T., Anderson, P., Seraphin, S., & Das, K. (2010). Chalcopyrite/Si heterojunctions for photovoltaic applications. Journal of Electronic Materials, 39(11), 2462-2466. https://doi.org/10.1007/s11664-010-1365-3

Chalcopyrite/Si heterojunctions for photovoltaic applications. / Akpa, O.; Shoieb, S.; Thompson, T.; Isaacs-Smith, T.; Anderson, P.; Seraphin, Supapan; Das, K.

In: Journal of Electronic Materials, Vol. 39, No. 11, 11.2010, p. 2462-2466.

Research output: Contribution to journalArticle

Akpa, O, Shoieb, S, Thompson, T, Isaacs-Smith, T, Anderson, P, Seraphin, S & Das, K 2010, 'Chalcopyrite/Si heterojunctions for photovoltaic applications', Journal of Electronic Materials, vol. 39, no. 11, pp. 2462-2466. https://doi.org/10.1007/s11664-010-1365-3
Akpa, O. ; Shoieb, S. ; Thompson, T. ; Isaacs-Smith, T. ; Anderson, P. ; Seraphin, Supapan ; Das, K. / Chalcopyrite/Si heterojunctions for photovoltaic applications. In: Journal of Electronic Materials. 2010 ; Vol. 39, No. 11. pp. 2462-2466.
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