Characterisation of Frequency Response Of 1-5μM Ingaasp Dfb Laser Diode and Ingaas Pin Photodiode by Heterodyne Measurement Technique

R. Schimpe, R. Schimpe, J. E. Bowers, T. L. Koch

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

The frequency response of an InGaAs PIN photodiode and the ratio of the frequency modulation (FM) index to the intensity modulation (IM) index of a 1-5 μm InGaAsP vapour-phase-transported DFB laser diode have been measured by an optical heterodyne measurement technique. From the response of the photodiode to the laser radiation beat frequency, a 20 GHz detector bandwidth is determined. The ratio of the FM and IM indices at 3 mW laser output power per facet decreases from 60 at 100 MHz modulation frequency to 3-3 above 2 GHz.

Original languageEnglish (US)
Pages (from-to)453-454
Number of pages2
JournalElectronics Letters
Volume22
Issue number9
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

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Keywords

  • Laser diodes
  • Measurement
  • Optical communications

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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