Characterisation of Frequency Response Of 1-5μM Ingaasp Dfb Laser Diode and Ingaas Pin Photodiode by Heterodyne Measurement Technique

R. Schimpe, R. Schimpe, J. E. Bowers, T. L. Koch

Research output: Contribution to journalArticle

53 Scopus citations


The frequency response of an InGaAs PIN photodiode and the ratio of the frequency modulation (FM) index to the intensity modulation (IM) index of a 1-5 μm InGaAsP vapour-phase-transported DFB laser diode have been measured by an optical heterodyne measurement technique. From the response of the photodiode to the laser radiation beat frequency, a 20 GHz detector bandwidth is determined. The ratio of the FM and IM indices at 3 mW laser output power per facet decreases from 60 at 100 MHz modulation frequency to 3-3 above 2 GHz.

Original languageEnglish (US)
Pages (from-to)453-454
Number of pages2
JournalElectronics Letters
Issue number9
StatePublished - Jan 1 1986
Externally publishedYes



  • Laser diodes
  • Measurement
  • Optical communications

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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