The frequency response of an InGaAs PIN photodiode and the ratio of the frequency modulation (FM) index to the intensity modulation (IM) index of a 1-5 μm InGaAsP vapour-phase-transported DFB laser diode have been measured by an optical heterodyne measurement technique. From the response of the photodiode to the laser radiation beat frequency, a 20 GHz detector bandwidth is determined. The ratio of the FM and IM indices at 3 mW laser output power per facet decreases from 60 at 100 MHz modulation frequency to 3-3 above 2 GHz.
- Laser diodes
- Optical communications
ASJC Scopus subject areas
- Electrical and Electronic Engineering