Characterization of disorder in semiconductors via single-photon interferometry

P. Bozsoki, P. Thomas, M. Kira, W. Hoyer, T. Meier, S. W. Koch, K. Maschke, I. Varga, H. Stolz

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5 Scopus citations

Abstract

The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.

Original languageEnglish (US)
Article number227402
JournalPhysical review letters
Volume97
Issue number22
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Bozsoki, P., Thomas, P., Kira, M., Hoyer, W., Meier, T., Koch, S. W., Maschke, K., Varga, I., & Stolz, H. (2006). Characterization of disorder in semiconductors via single-photon interferometry. Physical review letters, 97(22), [227402]. https://doi.org/10.1103/PhysRevLett.97.227402