Characterization of disorder in semiconductors via single-photon interferometry

P. Bozsoki, P. Thomas, M. Kira, W. Hoyer, T. Meier, Stephan W Koch, K. Maschke, I. Varga, H. Stolz

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.

Original languageEnglish (US)
Article number227402
JournalPhysical Review Letters
Volume97
Issue number22
DOIs
StatePublished - 2006
Externally publishedYes

Fingerprint

interferometry
disorders
photons
angular correlation
spontaneous emission
spatial distribution
photonics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Characterization of disorder in semiconductors via single-photon interferometry. / Bozsoki, P.; Thomas, P.; Kira, M.; Hoyer, W.; Meier, T.; Koch, Stephan W; Maschke, K.; Varga, I.; Stolz, H.

In: Physical Review Letters, Vol. 97, No. 22, 227402, 2006.

Research output: Contribution to journalArticle

Bozsoki, P, Thomas, P, Kira, M, Hoyer, W, Meier, T, Koch, SW, Maschke, K, Varga, I & Stolz, H 2006, 'Characterization of disorder in semiconductors via single-photon interferometry', Physical Review Letters, vol. 97, no. 22, 227402. https://doi.org/10.1103/PhysRevLett.97.227402
Bozsoki, P. ; Thomas, P. ; Kira, M. ; Hoyer, W. ; Meier, T. ; Koch, Stephan W ; Maschke, K. ; Varga, I. ; Stolz, H. / Characterization of disorder in semiconductors via single-photon interferometry. In: Physical Review Letters. 2006 ; Vol. 97, No. 22.
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