CHARACTERIZATION OF SOL-GEL DERIVED TANTALUM OXIDE FILMS.

L. A. Silverman, G. Teowee, Donald R Uhlmann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The authors studied the densification and dielectric properties of sol-gel derived tantalum oxide thin films as insulators in MIS capacitors. Hydrolysis of tantalum ethoxide is rapid and goes to completion in ethanol. Condensation is also rapid and goes to completion in toluene. Multiple layers were applied by spin-coating up to thicknesses of 3000 Angstrom before cracking of the coating during drying ensured. Densification occurs from room temperature to 450 C, with the original film thickness decreasing by about half in one hour at 450 C. No additional densification occurs upon heating to 750 C. The dielectric constant decreases from unfired samples to those fired at 450 C, and then increases on firing from 600 to 750 C. The value of the dielectric constant at 1 MHz for samples fired at 750 C for one hour is 20. Leakage currents as low as 2 multiplied by 10** minus **7 amp cm** minus **2 have been measured for applied fields of 200,000 v cm** minus **1.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages725-730
Number of pages6
Volume73
ISBN (Print)0931837391
StatePublished - 1986
Externally publishedYes

Fingerprint

Tantalum oxides
Densification
Oxide films
Sol-gels
Permittivity
Tantalum
Management information systems
Spin coating
Toluene
Leakage currents
Dielectric properties
Film thickness
Condensation
Hydrolysis
Drying
Ethanol
Capacitors
Heating
Thin films
Coatings

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Silverman, L. A., Teowee, G., & Uhlmann, D. R. (1986). CHARACTERIZATION OF SOL-GEL DERIVED TANTALUM OXIDE FILMS. In Materials Research Society Symposia Proceedings (Vol. 73, pp. 725-730). Materials Research Soc.

CHARACTERIZATION OF SOL-GEL DERIVED TANTALUM OXIDE FILMS. / Silverman, L. A.; Teowee, G.; Uhlmann, Donald R.

Materials Research Society Symposia Proceedings. Vol. 73 Materials Research Soc, 1986. p. 725-730.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silverman, LA, Teowee, G & Uhlmann, DR 1986, CHARACTERIZATION OF SOL-GEL DERIVED TANTALUM OXIDE FILMS. in Materials Research Society Symposia Proceedings. vol. 73, Materials Research Soc, pp. 725-730.
Silverman LA, Teowee G, Uhlmann DR. CHARACTERIZATION OF SOL-GEL DERIVED TANTALUM OXIDE FILMS. In Materials Research Society Symposia Proceedings. Vol. 73. Materials Research Soc. 1986. p. 725-730
Silverman, L. A. ; Teowee, G. ; Uhlmann, Donald R. / CHARACTERIZATION OF SOL-GEL DERIVED TANTALUM OXIDE FILMS. Materials Research Society Symposia Proceedings. Vol. 73 Materials Research Soc, 1986. pp. 725-730
@inproceedings{253083bdd4ca49278b2e67b316893713,
title = "CHARACTERIZATION OF SOL-GEL DERIVED TANTALUM OXIDE FILMS.",
abstract = "The authors studied the densification and dielectric properties of sol-gel derived tantalum oxide thin films as insulators in MIS capacitors. Hydrolysis of tantalum ethoxide is rapid and goes to completion in ethanol. Condensation is also rapid and goes to completion in toluene. Multiple layers were applied by spin-coating up to thicknesses of 3000 Angstrom before cracking of the coating during drying ensured. Densification occurs from room temperature to 450 C, with the original film thickness decreasing by about half in one hour at 450 C. No additional densification occurs upon heating to 750 C. The dielectric constant decreases from unfired samples to those fired at 450 C, and then increases on firing from 600 to 750 C. The value of the dielectric constant at 1 MHz for samples fired at 750 C for one hour is 20. Leakage currents as low as 2 multiplied by 10** minus **7 amp cm** minus **2 have been measured for applied fields of 200,000 v cm** minus **1.",
author = "Silverman, {L. A.} and G. Teowee and Uhlmann, {Donald R}",
year = "1986",
language = "English (US)",
isbn = "0931837391",
volume = "73",
pages = "725--730",
booktitle = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",

}

TY - GEN

T1 - CHARACTERIZATION OF SOL-GEL DERIVED TANTALUM OXIDE FILMS.

AU - Silverman, L. A.

AU - Teowee, G.

AU - Uhlmann, Donald R

PY - 1986

Y1 - 1986

N2 - The authors studied the densification and dielectric properties of sol-gel derived tantalum oxide thin films as insulators in MIS capacitors. Hydrolysis of tantalum ethoxide is rapid and goes to completion in ethanol. Condensation is also rapid and goes to completion in toluene. Multiple layers were applied by spin-coating up to thicknesses of 3000 Angstrom before cracking of the coating during drying ensured. Densification occurs from room temperature to 450 C, with the original film thickness decreasing by about half in one hour at 450 C. No additional densification occurs upon heating to 750 C. The dielectric constant decreases from unfired samples to those fired at 450 C, and then increases on firing from 600 to 750 C. The value of the dielectric constant at 1 MHz for samples fired at 750 C for one hour is 20. Leakage currents as low as 2 multiplied by 10** minus **7 amp cm** minus **2 have been measured for applied fields of 200,000 v cm** minus **1.

AB - The authors studied the densification and dielectric properties of sol-gel derived tantalum oxide thin films as insulators in MIS capacitors. Hydrolysis of tantalum ethoxide is rapid and goes to completion in ethanol. Condensation is also rapid and goes to completion in toluene. Multiple layers were applied by spin-coating up to thicknesses of 3000 Angstrom before cracking of the coating during drying ensured. Densification occurs from room temperature to 450 C, with the original film thickness decreasing by about half in one hour at 450 C. No additional densification occurs upon heating to 750 C. The dielectric constant decreases from unfired samples to those fired at 450 C, and then increases on firing from 600 to 750 C. The value of the dielectric constant at 1 MHz for samples fired at 750 C for one hour is 20. Leakage currents as low as 2 multiplied by 10** minus **7 amp cm** minus **2 have been measured for applied fields of 200,000 v cm** minus **1.

UR - http://www.scopus.com/inward/record.url?scp=0022992452&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022992452&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0931837391

VL - 73

SP - 725

EP - 730

BT - Materials Research Society Symposia Proceedings

PB - Materials Research Soc

ER -