Characterization of Strained-layer and asymmetrically coupled multiple quantum well electro-optic modulators

M. J. Hayduk, R. K. Boncek, S. T. Johns, D. A. Norton, M. F. Krol, B. P. McGinnis, Sergey Ten, H. Gibbs, G. Khitrova, N. Peyghambarian, D. C. Sun, E. T. Towe, R. P. Leavitt, J. T. Pham

Research output: Contribution to journalConference articlepeer-review

Abstract

Multiple quantum well (MQW) electro-optic modulators grown on both GaAs and InP substrates have been designed and characterized. Strained-layer (In,Ga)As/GaAs p-i-n diodes grown on (100) GaAs substrates were found to have a differential absorption coefficient of 3.7 × 103 cm-1 for an applied electric field of 6 6 × 104 V/cm. These (In,Ga)As/GaAs devices were also grown on (110) GaAs substrates and exhibited polarization sensitive electroabsorption. In addition, InGaAs/InAlAs asymmetric coupled MQWs were designed and fabricated. Real charge transfer kinetics between the coupled MQWs was exhibited by these devices.

Original languageEnglish (US)
Pages (from-to)19-29
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2216
DOIs
StatePublished - Jun 3 1994
EventPhotonics at the Air Force Photonics Center 1994 - Orlando, United States
Duration: Apr 4 1994Apr 8 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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