Charge-imaging field-effect transistor

L. H. Chen, M. A. Topinka, Brian J Leroy, R. M. Westervelt, K. D. Maranowski, A. C. Gossard

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at 7=4.2 K has a 1/f behavior and reaches values ≪ 1 e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever.

Original languageEnglish (US)
Pages (from-to)1202-1204
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number8
DOIs
StatePublished - Aug 20 2001
Externally publishedYes

Fingerprint

field effect transistors
aluminum gallium arsenides
spatial resolution
probes
electron gas
microscopes
microscopy
sensitivity
liquids
geometry
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, L. H., Topinka, M. A., Leroy, B. J., Westervelt, R. M., Maranowski, K. D., & Gossard, A. C. (2001). Charge-imaging field-effect transistor. Applied Physics Letters, 79(8), 1202-1204. https://doi.org/10.1063/1.1395516

Charge-imaging field-effect transistor. / Chen, L. H.; Topinka, M. A.; Leroy, Brian J; Westervelt, R. M.; Maranowski, K. D.; Gossard, A. C.

In: Applied Physics Letters, Vol. 79, No. 8, 20.08.2001, p. 1202-1204.

Research output: Contribution to journalArticle

Chen, LH, Topinka, MA, Leroy, BJ, Westervelt, RM, Maranowski, KD & Gossard, AC 2001, 'Charge-imaging field-effect transistor', Applied Physics Letters, vol. 79, no. 8, pp. 1202-1204. https://doi.org/10.1063/1.1395516
Chen LH, Topinka MA, Leroy BJ, Westervelt RM, Maranowski KD, Gossard AC. Charge-imaging field-effect transistor. Applied Physics Letters. 2001 Aug 20;79(8):1202-1204. https://doi.org/10.1063/1.1395516
Chen, L. H. ; Topinka, M. A. ; Leroy, Brian J ; Westervelt, R. M. ; Maranowski, K. D. ; Gossard, A. C. / Charge-imaging field-effect transistor. In: Applied Physics Letters. 2001 ; Vol. 79, No. 8. pp. 1202-1204.
@article{3c7259aa8b6a4456ae6e779d3912e8ab,
title = "Charge-imaging field-effect transistor",
abstract = "Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at 7=4.2 K has a 1/f behavior and reaches values ≪ 1 e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever.",
author = "Chen, {L. H.} and Topinka, {M. A.} and Leroy, {Brian J} and Westervelt, {R. M.} and Maranowski, {K. D.} and Gossard, {A. C.}",
year = "2001",
month = "8",
day = "20",
doi = "10.1063/1.1395516",
language = "English (US)",
volume = "79",
pages = "1202--1204",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Charge-imaging field-effect transistor

AU - Chen, L. H.

AU - Topinka, M. A.

AU - Leroy, Brian J

AU - Westervelt, R. M.

AU - Maranowski, K. D.

AU - Gossard, A. C.

PY - 2001/8/20

Y1 - 2001/8/20

N2 - Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at 7=4.2 K has a 1/f behavior and reaches values ≪ 1 e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever.

AB - Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at 7=4.2 K has a 1/f behavior and reaches values ≪ 1 e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever.

UR - http://www.scopus.com/inward/record.url?scp=0040927812&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040927812&partnerID=8YFLogxK

U2 - 10.1063/1.1395516

DO - 10.1063/1.1395516

M3 - Article

AN - SCOPUS:0040927812

VL - 79

SP - 1202

EP - 1204

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

ER -