Charge-imaging field-effect transistor

L. H. Chen, M. A. Topinka, B. J. LeRoy, R. M. Westervelt, K. D. Maranowski, A. C. Gossard

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Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at 7=4.2 K has a 1/f behavior and reaches values ≪ 1 e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever.

Original languageEnglish (US)
Pages (from-to)1202-1204
Number of pages3
JournalApplied Physics Letters
Issue number8
StatePublished - Aug 20 2001
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Chen, L. H., Topinka, M. A., LeRoy, B. J., Westervelt, R. M., Maranowski, K. D., & Gossard, A. C. (2001). Charge-imaging field-effect transistor. Applied Physics Letters, 79(8), 1202-1204.