Charge transfer luminescence in (GaIn)As/GaAs/Ga(NAs) double quantum wells

P. Springer, S. Gies, P. Hens, C. Fuchs, H. Han, J. Hader, J. V. Moloney, W. Stolz, K. Volz, S. W. Koch, W. Heimbrodt

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Charge transfer excitons are studied in double quantum well structures consisting of a (GaIn)As and a Ga(NAs) layer separated by a GaAs film of variable thickness. With decreasing barrier thickness, the gradual change from a spatially direct exciton within the (GaIn)As well to a charge transfer exciton bound across the GaAs spacing layer is observed. The optical spectra are well reproduced by a fully microscopic theory and band structure calculations based on the k·p method using a weak type-I valence band offset of approximately (45±40)meV at the Ga(NAs)/GaAs interface.

Original languageEnglish (US)
Pages (from-to)255-259
Number of pages5
JournalJournal of Luminescence
Volume175
DOIs
StatePublished - Jul 1 2016

Keywords

  • Band offset
  • Band structure
  • Dilute nitrides
  • Optical properties
  • Photoluminescence

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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