Charge trapping, isolated Ge defects, and photosensitivity in sputter deposited GeO2: SiO2 thin films

W. L. Warren, Kelly Potter, Barrett G Potter, J. A. Ruffner

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The nature of the defects in sputter-deposited GeO2:SiO2 thin films and their relationship to charge trapping and enhanced photosensitivity have been studied using electron paramagnetic resonance capacitance-voltage, and optical bleaching and absorption spectroscopies. We find a good qualitative agreement between the density of isolated Ge dangling bonds measured magnetically, the density of charge trapping sites measured electrically, and the density of absorbing centers measured optically. Collectively, all observations can be modeled by assuming that a change in spin state and charge state of isolated paramagnetic neutral Ge dangling bonds, to form either diamagnetic positively or negatively charged Ge sites, are largely responsible for the charge trapping and photosensitivity in these thin films.

Original languageEnglish (US)
Pages (from-to)1453-1455
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number10
StatePublished - Sep 2 1996
Externally publishedYes

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photosensitivity
trapping
defects
thin films
bleaching
electron paramagnetic resonance
absorption spectroscopy
capacitance
electric potential
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Charge trapping, isolated Ge defects, and photosensitivity in sputter deposited GeO2 : SiO2 thin films. / Warren, W. L.; Potter, Kelly; Potter, Barrett G; Ruffner, J. A.

In: Applied Physics Letters, Vol. 69, No. 10, 02.09.1996, p. 1453-1455.

Research output: Contribution to journalArticle

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