Abstract
Injection pumping of quantum-well (QW) lasers can lead to charging of the active region due to the different electron and hole masses. To investigate the significance and physical consequences of this effect, the consequences of electrical pumping and the associated charging phenomena are investigated microscopically. The analysis reveals the necessity to include the extended barrier states energetically above the band edge in addition to the quantum-confined well states. It is shown that the barrier-state populations compensate the QW charging. The replenishing of stimulated carrier recombination under CW laser operation causes persistent charge oscillations at the plasma frequency.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1024-1032 |
| Number of pages | 9 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 45 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2009 |
| Externally published | Yes |
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Keywords
- Charge carrier processes
- Plasma oscillations
- Quantum well lasers
- Semiconductor device modeling
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
Charging dynamics in electrically pumped quantum wells. / Bäumner, Ada; Kira, Mackillo; Koch, Stephan W.
In: IEEE Journal of Quantum Electronics, Vol. 45, No. 8, 2009, p. 1024-1032.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Charging dynamics in electrically pumped quantum wells
AU - Bäumner, Ada
AU - Kira, Mackillo
AU - Koch, Stephan W
PY - 2009
Y1 - 2009
N2 - Injection pumping of quantum-well (QW) lasers can lead to charging of the active region due to the different electron and hole masses. To investigate the significance and physical consequences of this effect, the consequences of electrical pumping and the associated charging phenomena are investigated microscopically. The analysis reveals the necessity to include the extended barrier states energetically above the band edge in addition to the quantum-confined well states. It is shown that the barrier-state populations compensate the QW charging. The replenishing of stimulated carrier recombination under CW laser operation causes persistent charge oscillations at the plasma frequency.
AB - Injection pumping of quantum-well (QW) lasers can lead to charging of the active region due to the different electron and hole masses. To investigate the significance and physical consequences of this effect, the consequences of electrical pumping and the associated charging phenomena are investigated microscopically. The analysis reveals the necessity to include the extended barrier states energetically above the band edge in addition to the quantum-confined well states. It is shown that the barrier-state populations compensate the QW charging. The replenishing of stimulated carrier recombination under CW laser operation causes persistent charge oscillations at the plasma frequency.
KW - Charge carrier processes
KW - Plasma oscillations
KW - Quantum well lasers
KW - Semiconductor device modeling
UR - http://www.scopus.com/inward/record.url?scp=77950000384&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77950000384&partnerID=8YFLogxK
U2 - 10.1109/JQE.2009.2017281
DO - 10.1109/JQE.2009.2017281
M3 - Article
AN - SCOPUS:77950000384
VL - 45
SP - 1024
EP - 1032
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 8
ER -