Chemical passivation of In0.53Ga0.47As(100) using ammonium sulfide and thiols

Y. Contreras; Anthony J Muscat

doi:10.1149/06908.0261ecst

Chemical passivation of In_0.53Ga_0.47As(100) using ammonium sulfide and thiols

Y. Contreras, Anthony J Muscat

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Dilute solutions of (NH₄)₂S in water and of 1-eicosanethiol (ET) in ethanol were used to deposit a protective layer to prevent the reoxidation of clean In_0.53Ga_0.47As(100) substrates. The surface composition of the InGaAs after oxide etching in 0.3 M HF, and after immersion in (NH₄)₂S or ET solutions was studied using XPS. Immersing clean InGaAs substrates in 4.0 mM ET for 20 h protected the surface for 4 min, after which oxide states were detected by XPS. A 20 min immersion in 3 mM (NH₄)₂S in a glove box slowed down the reoxidation process. After 1 h of atmosphere exposure, the amount of InGaAs oxides on the surface treated in (NH₄)₂S were lower than those of a control sample after only 4 min of air exposure. The sulfur layer deposited from aqueous ammonium sulfide and the self-assembled eicosanethiol layer blocked reoxidation and chemically passivated the surface only for brief ambient exposures.

Original language	English (US)
Title of host publication	ECS Transactions
Publisher	Electrochemical Society Inc.
Pages	261-267
Number of pages	7
Volume	69
Edition	8
ISBN (Print)	9781607685395
DOIs	https://doi.org/10.1149/06908.0261ecst
State	Published - 2015
Event	Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Other

Other	Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting
Country	United States
City	Phoenix
Period	10/11/15 → 10/15/15

ASJC Scopus subject areas

Engineering(all)

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@inproceedings{0b5200a29abf43e285c28d6d2fb2ff9a,

title = "Chemical passivation of In0.53Ga0.47As(100) using ammonium sulfide and thiols",

abstract = "Dilute solutions of (NH4)2S in water and of 1-eicosanethiol (ET) in ethanol were used to deposit a protective layer to prevent the reoxidation of clean In0.53Ga0.47As(100) substrates. The surface composition of the InGaAs after oxide etching in 0.3 M HF, and after immersion in (NH4)2S or ET solutions was studied using XPS. Immersing clean InGaAs substrates in 4.0 mM ET for 20 h protected the surface for 4 min, after which oxide states were detected by XPS. A 20 min immersion in 3 mM (NH4)2S in a glove box slowed down the reoxidation process. After 1 h of atmosphere exposure, the amount of InGaAs oxides on the surface treated in (NH4)2S were lower than those of a control sample after only 4 min of air exposure. The sulfur layer deposited from aqueous ammonium sulfide and the self-assembled eicosanethiol layer blocked reoxidation and chemically passivated the surface only for brief ambient exposures.",

author = "Y. Contreras and Muscat, {Anthony J}",

year = "2015",

doi = "10.1149/06908.0261ecst",

language = "English (US)",

isbn = "9781607685395",

volume = "69",

pages = "261--267",

booktitle = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

edition = "8",

note = "Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",

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TY - GEN

T1 - Chemical passivation of In0.53Ga0.47As(100) using ammonium sulfide and thiols

AU - Contreras, Y.

AU - Muscat, Anthony J

PY - 2015

Y1 - 2015

N2 - Dilute solutions of (NH4)2S in water and of 1-eicosanethiol (ET) in ethanol were used to deposit a protective layer to prevent the reoxidation of clean In0.53Ga0.47As(100) substrates. The surface composition of the InGaAs after oxide etching in 0.3 M HF, and after immersion in (NH4)2S or ET solutions was studied using XPS. Immersing clean InGaAs substrates in 4.0 mM ET for 20 h protected the surface for 4 min, after which oxide states were detected by XPS. A 20 min immersion in 3 mM (NH4)2S in a glove box slowed down the reoxidation process. After 1 h of atmosphere exposure, the amount of InGaAs oxides on the surface treated in (NH4)2S were lower than those of a control sample after only 4 min of air exposure. The sulfur layer deposited from aqueous ammonium sulfide and the self-assembled eicosanethiol layer blocked reoxidation and chemically passivated the surface only for brief ambient exposures.

AB - Dilute solutions of (NH4)2S in water and of 1-eicosanethiol (ET) in ethanol were used to deposit a protective layer to prevent the reoxidation of clean In0.53Ga0.47As(100) substrates. The surface composition of the InGaAs after oxide etching in 0.3 M HF, and after immersion in (NH4)2S or ET solutions was studied using XPS. Immersing clean InGaAs substrates in 4.0 mM ET for 20 h protected the surface for 4 min, after which oxide states were detected by XPS. A 20 min immersion in 3 mM (NH4)2S in a glove box slowed down the reoxidation process. After 1 h of atmosphere exposure, the amount of InGaAs oxides on the surface treated in (NH4)2S were lower than those of a control sample after only 4 min of air exposure. The sulfur layer deposited from aqueous ammonium sulfide and the self-assembled eicosanethiol layer blocked reoxidation and chemically passivated the surface only for brief ambient exposures.

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DO - 10.1149/06908.0261ecst

M3 - Conference contribution

AN - SCOPUS:84946076795

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EP - 267

BT - ECS Transactions

PB - Electrochemical Society Inc.

T2 - Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting

Y2 - 11 October 2015 through 15 October 2015

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