Abstract
Dilute solutions of (NH4)2S in water and of 1-eicosanethiol (ET) in ethanol were used to deposit a protective layer to prevent the reoxidation of clean In0.53Ga0.47As(100) substrates. The surface composition of the InGaAs after oxide etching in 0.3 M HF, and after immersion in (NH4)2S or ET solutions was studied using XPS. Immersing clean InGaAs substrates in 4.0 mM ET for 20 h protected the surface for 4 min, after which oxide states were detected by XPS. A 20 min immersion in 3 mM (NH4)2S in a glove box slowed down the reoxidation process. After 1 h of atmosphere exposure, the amount of InGaAs oxides on the surface treated in (NH4)2S were lower than those of a control sample after only 4 min of air exposure. The sulfur layer deposited from aqueous ammonium sulfide and the self-assembled eicosanethiol layer blocked reoxidation and chemically passivated the surface only for brief ambient exposures.
Original language | English (US) |
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Title of host publication | ECS Transactions |
Publisher | Electrochemical Society Inc. |
Pages | 261-267 |
Number of pages | 7 |
Volume | 69 |
Edition | 8 |
ISBN (Print) | 9781607685395 |
DOIs | |
State | Published - 2015 |
Event | Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015 |
Other
Other | Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting |
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Country | United States |
City | Phoenix |
Period | 10/11/15 → 10/15/15 |
ASJC Scopus subject areas
- Engineering(all)