Chemical passivation of In0.53Ga0.47As(100) using ammonium sulfide and thiols

Y. Contreras, A. J. Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Dilute solutions of (NH4)2S in water and of 1-eicosanethiol (ET) in ethanol were used to deposit a protective layer to prevent the reoxidation of clean In0.53Ga0.47As(100) substrates. The surface composition of the InGaAs after oxide etching in 0.3 M HF, and after immersion in (NH4)2S or ET solutions was studied using XPS. Immersing clean InGaAs substrates in 4.0 mM ET for 20 h protected the surface for 4 min, after which oxide states were detected by XPS. A 20 min immersion in 3 mM (NH4)2S in a glove box slowed down the reoxidation process. After 1 h of atmosphere exposure, the amount of InGaAs oxides on the surface treated in (NH4)2S were lower than those of a control sample after only 4 min of air exposure. The sulfur layer deposited from aqueous ammonium sulfide and the self-assembled eicosanethiol layer blocked reoxidation and chemically passivated the surface only for brief ambient exposures.

Original languageEnglish (US)
Title of host publicationSemiconductor Cleaning Science and Technology 14, SCST 14
EditorsT. Hattori, P. W. Mertens, R. E. Novak, J. Ruzyllo
PublisherElectrochemical Society Inc.
Pages261-267
Number of pages7
Edition8
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2015
EventSymposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
Number8
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting
Country/TerritoryUnited States
CityPhoenix
Period10/11/1510/15/15

ASJC Scopus subject areas

  • Engineering(all)

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