Chemical passivation of In0.53Ga0.47As(100) using ammonium sulfide and thiols

Y. Contreras, Anthony J Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Dilute solutions of (NH4)2S in water and of 1-eicosanethiol (ET) in ethanol were used to deposit a protective layer to prevent the reoxidation of clean In0.53Ga0.47As(100) substrates. The surface composition of the InGaAs after oxide etching in 0.3 M HF, and after immersion in (NH4)2S or ET solutions was studied using XPS. Immersing clean InGaAs substrates in 4.0 mM ET for 20 h protected the surface for 4 min, after which oxide states were detected by XPS. A 20 min immersion in 3 mM (NH4)2S in a glove box slowed down the reoxidation process. After 1 h of atmosphere exposure, the amount of InGaAs oxides on the surface treated in (NH4)2S were lower than those of a control sample after only 4 min of air exposure. The sulfur layer deposited from aqueous ammonium sulfide and the self-assembled eicosanethiol layer blocked reoxidation and chemically passivated the surface only for brief ambient exposures.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages261-267
Number of pages7
Volume69
Edition8
ISBN (Print)9781607685395
DOIs
Publication statusPublished - 2015
EventSymposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Other

OtherSymposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Contreras, Y., & Muscat, A. J. (2015). Chemical passivation of In0.53Ga0.47As(100) using ammonium sulfide and thiols. In ECS Transactions (8 ed., Vol. 69, pp. 261-267). Electrochemical Society Inc.. https://doi.org/10.1149/06908.0261ecst