CHEMICAL VAPOR DEPOSITION OF HIGH TEMPERATURE SILICON DIOXIDE.

Ara Philipossian, Robert F. Sarkozy

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

Since its introduction in the mid-1970's, Vacuum-CVD high temperature oxide (HTO) has found numerous applications in the semiconductor industry. It is most extensively used as a primary or secondary passivation layer over silicon devices, and can be used as an intermediate coating applied to a substrate to minimize hysteresis and enhance adhesion. This work describes the design, construction, and performance of a V-CVD system for the large-scale industrial production of thin-film HTO, on circular substrates up to 150mm in diameter.

Original languageEnglish (US)
Pages (from-to)642-643
Number of pages2
JournalElectrochemical Society Extended Abstracts
Volume84-2
StatePublished - Dec 1 1984
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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