Since its introduction in the mid-1970's, Vacuum-CVD high temperature oxide (HTO) has found numerous applications in the semiconductor industry. It is most extensively used as a primary or secondary passivation layer over silicon devices, and can be used as an intermediate coating applied to a substrate to minimize hysteresis and enhance adhesion. This work describes the design, construction, and performance of a V-CVD system for the large-scale industrial production of thin-film HTO, on circular substrates up to 150mm in diameter.
|Original language||English (US)|
|Number of pages||2|
|Journal||Electrochemical Society Extended Abstracts|
|State||Published - Dec 1 1984|
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