CHEMICAL VAPOR DEPOSITION OF HIGH TEMPERATURE SILICON DIOXIDE.

Ara Philipossian, Robert F. Sarkozy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Since its introduction in the mid-1970's, Vacuum-CVD high temperature oxide (HTO) has found numerous applications in the semiconductor industry. It is most extensively used as a primary or secondary passivation layer over silicon devices, and can be used as an intermediate coating applied to a substrate to minimize hysteresis and enhance adhesion. This work describes the design, construction, and performance of a V-CVD system for the large-scale industrial production of thin-film HTO, on circular substrates up to 150mm in diameter.

Original languageEnglish (US)
Title of host publicationElectrochemical Society Extended Abstracts
PublisherElectrochemical Soc
Pages642-643
Number of pages2
Volume84-2
StatePublished - 1984
Externally publishedYes

Fingerprint

Chemical vapor deposition
Silica
Oxides
Substrates
Passivation
Hysteresis
Adhesion
Vacuum
Semiconductor materials
Thin films
Silicon
Coatings
Temperature
Industry

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Philipossian, A., & Sarkozy, R. F. (1984). CHEMICAL VAPOR DEPOSITION OF HIGH TEMPERATURE SILICON DIOXIDE. In Electrochemical Society Extended Abstracts (Vol. 84-2, pp. 642-643). Electrochemical Soc.

CHEMICAL VAPOR DEPOSITION OF HIGH TEMPERATURE SILICON DIOXIDE. / Philipossian, Ara; Sarkozy, Robert F.

Electrochemical Society Extended Abstracts. Vol. 84-2 Electrochemical Soc, 1984. p. 642-643.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Philipossian, A & Sarkozy, RF 1984, CHEMICAL VAPOR DEPOSITION OF HIGH TEMPERATURE SILICON DIOXIDE. in Electrochemical Society Extended Abstracts. vol. 84-2, Electrochemical Soc, pp. 642-643.
Philipossian A, Sarkozy RF. CHEMICAL VAPOR DEPOSITION OF HIGH TEMPERATURE SILICON DIOXIDE. In Electrochemical Society Extended Abstracts. Vol. 84-2. Electrochemical Soc. 1984. p. 642-643
Philipossian, Ara ; Sarkozy, Robert F. / CHEMICAL VAPOR DEPOSITION OF HIGH TEMPERATURE SILICON DIOXIDE. Electrochemical Society Extended Abstracts. Vol. 84-2 Electrochemical Soc, 1984. pp. 642-643
@inproceedings{dea4b991c7ef4a27890a1bbf6ad0b734,
title = "CHEMICAL VAPOR DEPOSITION OF HIGH TEMPERATURE SILICON DIOXIDE.",
abstract = "Since its introduction in the mid-1970's, Vacuum-CVD high temperature oxide (HTO) has found numerous applications in the semiconductor industry. It is most extensively used as a primary or secondary passivation layer over silicon devices, and can be used as an intermediate coating applied to a substrate to minimize hysteresis and enhance adhesion. This work describes the design, construction, and performance of a V-CVD system for the large-scale industrial production of thin-film HTO, on circular substrates up to 150mm in diameter.",
author = "Ara Philipossian and Sarkozy, {Robert F.}",
year = "1984",
language = "English (US)",
volume = "84-2",
pages = "642--643",
booktitle = "Electrochemical Society Extended Abstracts",
publisher = "Electrochemical Soc",

}

TY - GEN

T1 - CHEMICAL VAPOR DEPOSITION OF HIGH TEMPERATURE SILICON DIOXIDE.

AU - Philipossian, Ara

AU - Sarkozy, Robert F.

PY - 1984

Y1 - 1984

N2 - Since its introduction in the mid-1970's, Vacuum-CVD high temperature oxide (HTO) has found numerous applications in the semiconductor industry. It is most extensively used as a primary or secondary passivation layer over silicon devices, and can be used as an intermediate coating applied to a substrate to minimize hysteresis and enhance adhesion. This work describes the design, construction, and performance of a V-CVD system for the large-scale industrial production of thin-film HTO, on circular substrates up to 150mm in diameter.

AB - Since its introduction in the mid-1970's, Vacuum-CVD high temperature oxide (HTO) has found numerous applications in the semiconductor industry. It is most extensively used as a primary or secondary passivation layer over silicon devices, and can be used as an intermediate coating applied to a substrate to minimize hysteresis and enhance adhesion. This work describes the design, construction, and performance of a V-CVD system for the large-scale industrial production of thin-film HTO, on circular substrates up to 150mm in diameter.

UR - http://www.scopus.com/inward/record.url?scp=0021621837&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021621837&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0021621837

VL - 84-2

SP - 642

EP - 643

BT - Electrochemical Society Extended Abstracts

PB - Electrochemical Soc

ER -