Circular-grating surface-emitting distributed Bragg reflector lasers on an InGaAs-GaAs structure for 0.98-μm applications

Mahmoud Fallahi, Francoise Chatenoud, Michel Dion, Ian Templeton, Richard Barber, Jim Thompson

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

In this paper, we report on the design and fabrication of electrically-pumped circular-grating surface-emitting DBR lasers for operation in the 0.98-μm wavelength range. The layer structure with InGaAs-GaAs-AlGaAs strained multiquantum-wells was obtained by one-step epitaxial growth. Circular gratings are defined by electron-beam lithography around circular gain sections of different diameters. Low threshold CW operation as low as 26 mA for a 60-μm diameter gain section, and high-power pulsed operation of over 120 mW for a 100-μm diameter gain region are demonstrated. A quasi-circular far-field pattern with a divergence of about 1° is obtained.

Original languageEnglish (US)
Pages (from-to)382-386
Number of pages5
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume1
Issue number2
DOIs
StatePublished - Jun 1995
Externally publishedYes

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DBR lasers
Electron beam lithography
Surface emitting lasers
surface emitting lasers
Epitaxial growth
gratings
Fabrication
Wavelength
aluminum gallium arsenides
far fields
divergence
lithography
electron beams
fabrication
thresholds
wavelengths

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Circular-grating surface-emitting distributed Bragg reflector lasers on an InGaAs-GaAs structure for 0.98-μm applications. / Fallahi, Mahmoud; Chatenoud, Francoise; Dion, Michel; Templeton, Ian; Barber, Richard; Thompson, Jim.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 1, No. 2, 06.1995, p. 382-386.

Research output: Contribution to journalArticle

Fallahi, Mahmoud ; Chatenoud, Francoise ; Dion, Michel ; Templeton, Ian ; Barber, Richard ; Thompson, Jim. / Circular-grating surface-emitting distributed Bragg reflector lasers on an InGaAs-GaAs structure for 0.98-μm applications. In: IEEE Journal on Selected Topics in Quantum Electronics. 1995 ; Vol. 1, No. 2. pp. 382-386.
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