In this paper, we report on the design and fabrication of electrically-pumped circular-grating surface-emitting DBR lasers for operation in the 0.98-μm wavelength range. The layer structure with InGaAs–GaAs–AlGaAs strained multiquantum-wells was obtained by one-step epitaxial growth. Circular gratings are defined by electron-beam lithography around circular gain sections of different diameters. Low threshold CW operation as low as 26 mA for a 60-μm diameter gain section, and high-power pulsed operation of over 120 mW for a 100-μm diameter gain region are demonstrated. A quasi-circular far-field pattern with a divergence of about 1° is obtained.
|Original language||English (US)|
|Number of pages||5|
|Journal||IEEE Journal on Selected Topics in Quantum Electronics|
|State||Published - Jun 1995|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering