Direct tunneling (1, 2) through the gate SiO2 (εr ≈4) has become a serious concern for MOSFET scaling. The semiconductor industry is focusing on materials with high dielectric constants (ε≥ 10) to replace SiO2 gate oxides. Among the potential high-K materials, oxides and silicates of Hafnium (Hf) have shown the most promise (3). The potential of cross-contamination of Hf in a plasma etch tool was previously investigated (7). This paper extends the study and discusses the results of standard cleaning processes (SCI, SC2 etc.) on the cross-contaminated wafers. None of the standard cleaning solutions completely remove the contamination.
|Original language||English (US)|
|Number of pages||8|
|State||Published - Dec 1 2005|
|Event||9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States|
Duration: Oct 16 2005 → Oct 21 2005
ASJC Scopus subject areas