Cleaning of cross-contamination of ihgh-k dielectrics in plasma etch tool

Viraj Pandit, H. G. Parks, Bert Vermeire, Srini Raghavan

Research output: Contribution to journalConference articlepeer-review


Direct tunneling (1, 2) through the gate SiO2r ≈4) has become a serious concern for MOSFET scaling. The semiconductor industry is focusing on materials with high dielectric constants (ε≥ 10) to replace SiO2 gate oxides. Among the potential high-K materials, oxides and silicates of Hafnium (Hf) have shown the most promise (3). The potential of cross-contamination of Hf in a plasma etch tool was previously investigated (7). This paper extends the study and discusses the results of standard cleaning processes (SCI, SC2 etc.) on the cross-contaminated wafers. None of the standard cleaning solutions completely remove the contamination.

Original languageEnglish (US)
Pages (from-to)59-66
Number of pages8
JournalECS Transactions
Issue number3
StatePublished - Dec 1 2005
Externally publishedYes
Event9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

ASJC Scopus subject areas

  • Engineering(all)

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