Cleaning of cross-contamination of ihgh-k dielectrics in plasma etch tool

Viraj Pandit, H. G. Parks, Bert Vermeire, Srini Raghavan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Direct tunneling (1, 2) through the gate SiO2r ≈4) has become a serious concern for MOSFET scaling. The semiconductor industry is focusing on materials with high dielectric constants (ε≥ 10) to replace SiO2 gate oxides. Among the potential high-K materials, oxides and silicates of Hafnium (Hf) have shown the most promise (3). The potential of cross-contamination of Hf in a plasma etch tool was previously investigated (7). This paper extends the study and discusses the results of standard cleaning processes (SCI, SC2 etc.) on the cross-contaminated wafers. None of the standard cleaning solutions completely remove the contamination.

Original languageEnglish (US)
Title of host publicationECS Transactions
EditorsJ. Ruzyllo, T. Hattori, R.E. Novak
Pages59-66
Number of pages8
Volume1
Edition3
StatePublished - 2005
Externally publishedYes
Event9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

Other

Other9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society
CountryUnited States
CityLos Angeles, CA
Period10/16/0510/21/05

Fingerprint

Hafnium
Cleaning
Contamination
Plasmas
Oxides
Silicates
Permittivity
Semiconductor materials
Industry

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Pandit, V., Parks, H. G., Vermeire, B., & Raghavan, S. (2005). Cleaning of cross-contamination of ihgh-k dielectrics in plasma etch tool. In J. Ruzyllo, T. Hattori, & R. E. Novak (Eds.), ECS Transactions (3 ed., Vol. 1, pp. 59-66)

Cleaning of cross-contamination of ihgh-k dielectrics in plasma etch tool. / Pandit, Viraj; Parks, H. G.; Vermeire, Bert; Raghavan, Srini.

ECS Transactions. ed. / J. Ruzyllo; T. Hattori; R.E. Novak. Vol. 1 3. ed. 2005. p. 59-66.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pandit, V, Parks, HG, Vermeire, B & Raghavan, S 2005, Cleaning of cross-contamination of ihgh-k dielectrics in plasma etch tool. in J Ruzyllo, T Hattori & RE Novak (eds), ECS Transactions. 3 edn, vol. 1, pp. 59-66, 9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society, Los Angeles, CA, United States, 10/16/05.
Pandit V, Parks HG, Vermeire B, Raghavan S. Cleaning of cross-contamination of ihgh-k dielectrics in plasma etch tool. In Ruzyllo J, Hattori T, Novak RE, editors, ECS Transactions. 3 ed. Vol. 1. 2005. p. 59-66
Pandit, Viraj ; Parks, H. G. ; Vermeire, Bert ; Raghavan, Srini. / Cleaning of cross-contamination of ihgh-k dielectrics in plasma etch tool. ECS Transactions. editor / J. Ruzyllo ; T. Hattori ; R.E. Novak. Vol. 1 3. ed. 2005. pp. 59-66
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