Cleaning technology for improved gate oxide integrity

M. Meuris, S. Verhaverbeke, P. W. Mertens, H. F. Schmidt, M. M. Heyns, M. Kubota, A. Philipossian, K. Dillenbeck, D. Gräf, A. Schnegg, R. de Blank

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

The effect of metal contamination and silicon surface defects on the gate oxide yield is investigated. The characteristics of various cleaning procedures are studied and correlated with the integrity of thin gate oxides. The standard wet cleaning recipe is optimized and a new cleaning strategy is proposed. Selective contamination experiments in chemicals are used to investigate the effect of small amounts of metal contaminants on the gate oxide integrity. HF-last processes are investigated and a new wet cleaning strategy is proposed.

Original languageEnglish (US)
Pages (from-to)21-28
Number of pages8
JournalMicroelectronic Engineering
Volume22
Issue number1-4
DOIs
StatePublished - Aug 1993
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Meuris, M., Verhaverbeke, S., Mertens, P. W., Schmidt, H. F., Heyns, M. M., Kubota, M., Philipossian, A., Dillenbeck, K., Gräf, D., Schnegg, A., & de Blank, R. (1993). Cleaning technology for improved gate oxide integrity. Microelectronic Engineering, 22(1-4), 21-28. https://doi.org/10.1016/0167-9317(93)90123-M