Clustering effects in Ga(AsBi)

Sebastian Imhof, Angela Thränhardt, Alexej Chernikov, Martin Koch, Niko S. Köster, Kolja Kolata, Sangam Chatterjee, Stephan W. Koch, Xianfeng Lu, Shane R. Johnson, Dan A. Beaton, Thomas Tiedje, Oleg Rubel

Research output: Contribution to journalArticle

108 Scopus citations

Abstract

The photoluminescence from a Ga(AsBi) sample is investigated as a function of pump power and lattice temperature. The disorder-related features are analyzed using a Monte Carlo simulation technique. A two-scale approach is introduced to separately account for cluster localization and alloy disorder effects. The corresponding characteristic energy scales of 11 and 45 meV are deduced from the detailed comparison between experiment and simulation.

Original languageEnglish (US)
Article number131115
JournalApplied Physics Letters
Volume96
Issue number13
DOIs
StatePublished - Apr 12 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Imhof, S., Thränhardt, A., Chernikov, A., Koch, M., Köster, N. S., Kolata, K., Chatterjee, S., Koch, S. W., Lu, X., Johnson, S. R., Beaton, D. A., Tiedje, T., & Rubel, O. (2010). Clustering effects in Ga(AsBi). Applied Physics Letters, 96(13), [131115]. https://doi.org/10.1063/1.3374884