Coherent electric-field effects in semiconductors

T. Meier, K. C. Je, F. Rossi, J. Hader, P. Thomas, S. W. Koch

Research output: Contribution to journalConference article

Abstract

A microscopic many-body theory is presented which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of static and time-dependent electric fields applied in the growth direction. For static fields the Bloch-oscillation dynamics, the role of Coulomb effects, carrier relaxation, phonon scattering, and inter- and intraband polarization dephasing is analyzed. The observability of dynamic localization using optical spectroscopy is discussed for alternating applied fields.

Original languageEnglish (US)
Pages (from-to)20-27
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3277
DOIs
StatePublished - Dec 1 1998
EventUltrafast Phenomena in Semiconductors II - San Jose, CA, United States
Duration: Jan 28 1998Jan 29 1998

Keywords

  • Bloch oscillations
  • Dynamic localization
  • Electron-phonon scattering
  • Electronic correlations
  • Field-induced effects
  • Many-body theory
  • Nonlinear optical phenomena
  • Semiconductor superlattices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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