Coherent electric-field effects in semiconductors

T. Meier, K. C. Je, F. Rossi, Jorg Hader, P. Thomas, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A microscopic many-body theory is presented which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of static and time-dependent electric fields applied in the growth direction. For static fields the Bloch-oscillation dynamics, the role of Coulomb effects, carrier relaxation, phonon scattering, and inter- and intraband polarization dephasing is analyzed. The observability of dynamic localization using optical spectroscopy is discussed for alternating applied fields.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, H.R. Fetterman
Pages20-27
Number of pages8
Volume3277
DOIs
StatePublished - 1998
Externally publishedYes
EventUltrafast Phenomena in Semiconductors II - San Jose, CA, United States
Duration: Jan 28 1998Jan 29 1998

Other

OtherUltrafast Phenomena in Semiconductors II
CountryUnited States
CitySan Jose, CA
Period1/28/981/29/98

Fingerprint

Electric field effects
Semiconductor superlattices
Semiconductor materials
Phonon scattering
electric fields
Observability
superlattices
Optical properties
Electric fields
Polarization
optical properties
oscillations
polarization
scattering
spectroscopy
Optical spectroscopy

Keywords

  • Bloch oscillations
  • Dynamic localization
  • Electron-phonon scattering
  • Electronic correlations
  • Field-induced effects
  • Many-body theory
  • Nonlinear optical phenomena
  • Semiconductor superlattices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Meier, T., Je, K. C., Rossi, F., Hader, J., Thomas, P., & Koch, S. W. (1998). Coherent electric-field effects in semiconductors. In K. T. Tsen, & H. R. Fetterman (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3277, pp. 20-27) https://doi.org/10.1117/12.306150

Coherent electric-field effects in semiconductors. / Meier, T.; Je, K. C.; Rossi, F.; Hader, Jorg; Thomas, P.; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.T. Tsen; H.R. Fetterman. Vol. 3277 1998. p. 20-27.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Meier, T, Je, KC, Rossi, F, Hader, J, Thomas, P & Koch, SW 1998, Coherent electric-field effects in semiconductors. in KT Tsen & HR Fetterman (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 3277, pp. 20-27, Ultrafast Phenomena in Semiconductors II, San Jose, CA, United States, 1/28/98. https://doi.org/10.1117/12.306150
Meier T, Je KC, Rossi F, Hader J, Thomas P, Koch SW. Coherent electric-field effects in semiconductors. In Tsen KT, Fetterman HR, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3277. 1998. p. 20-27 https://doi.org/10.1117/12.306150
Meier, T. ; Je, K. C. ; Rossi, F. ; Hader, Jorg ; Thomas, P. ; Koch, Stephan W. / Coherent electric-field effects in semiconductors. Proceedings of SPIE - The International Society for Optical Engineering. editor / K.T. Tsen ; H.R. Fetterman. Vol. 3277 1998. pp. 20-27
@inproceedings{66a1ea0cfa224aec8798f50f989f9e4f,
title = "Coherent electric-field effects in semiconductors",
abstract = "A microscopic many-body theory is presented which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of static and time-dependent electric fields applied in the growth direction. For static fields the Bloch-oscillation dynamics, the role of Coulomb effects, carrier relaxation, phonon scattering, and inter- and intraband polarization dephasing is analyzed. The observability of dynamic localization using optical spectroscopy is discussed for alternating applied fields.",
keywords = "Bloch oscillations, Dynamic localization, Electron-phonon scattering, Electronic correlations, Field-induced effects, Many-body theory, Nonlinear optical phenomena, Semiconductor superlattices",
author = "T. Meier and Je, {K. C.} and F. Rossi and Jorg Hader and P. Thomas and Koch, {Stephan W}",
year = "1998",
doi = "10.1117/12.306150",
language = "English (US)",
volume = "3277",
pages = "20--27",
editor = "K.T. Tsen and H.R. Fetterman",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Coherent electric-field effects in semiconductors

AU - Meier, T.

AU - Je, K. C.

AU - Rossi, F.

AU - Hader, Jorg

AU - Thomas, P.

AU - Koch, Stephan W

PY - 1998

Y1 - 1998

N2 - A microscopic many-body theory is presented which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of static and time-dependent electric fields applied in the growth direction. For static fields the Bloch-oscillation dynamics, the role of Coulomb effects, carrier relaxation, phonon scattering, and inter- and intraband polarization dephasing is analyzed. The observability of dynamic localization using optical spectroscopy is discussed for alternating applied fields.

AB - A microscopic many-body theory is presented which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of static and time-dependent electric fields applied in the growth direction. For static fields the Bloch-oscillation dynamics, the role of Coulomb effects, carrier relaxation, phonon scattering, and inter- and intraband polarization dephasing is analyzed. The observability of dynamic localization using optical spectroscopy is discussed for alternating applied fields.

KW - Bloch oscillations

KW - Dynamic localization

KW - Electron-phonon scattering

KW - Electronic correlations

KW - Field-induced effects

KW - Many-body theory

KW - Nonlinear optical phenomena

KW - Semiconductor superlattices

UR - http://www.scopus.com/inward/record.url?scp=0032226049&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032226049&partnerID=8YFLogxK

U2 - 10.1117/12.306150

DO - 10.1117/12.306150

M3 - Conference contribution

AN - SCOPUS:0032226049

VL - 3277

SP - 20

EP - 27

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Tsen, K.T.

A2 - Fetterman, H.R.

ER -