Abstract
A microscopic theory for vertical-cavity surface-emitting lasers (VCSELs) with quantum-well active layers is applied to study the transient gain dynamics, nonequilibrium carrier effects and the influence of the laser design. We investigate how the laser response on femtosecond pulse excitation can be controlled in terms of (i) excitation conditions of the VCSEL, (ii) the mirror design, which allows to change the cavity quality and the resonance frequency, and (iii) the number and position of active semiconductor quantum-wells.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1185-1187 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 69 |
| Issue number | 9 |
| State | Published - Aug 26 1996 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Combined influence of design and carrier scattering on the ultrafast emission dynamics of quantum well microcavity lasers. / Jahnke, F.; Schneider, H. C.; Koch, Stephan W.
In: Applied Physics Letters, Vol. 69, No. 9, 26.08.1996, p. 1185-1187.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Combined influence of design and carrier scattering on the ultrafast emission dynamics of quantum well microcavity lasers
AU - Jahnke, F.
AU - Schneider, H. C.
AU - Koch, Stephan W
PY - 1996/8/26
Y1 - 1996/8/26
N2 - A microscopic theory for vertical-cavity surface-emitting lasers (VCSELs) with quantum-well active layers is applied to study the transient gain dynamics, nonequilibrium carrier effects and the influence of the laser design. We investigate how the laser response on femtosecond pulse excitation can be controlled in terms of (i) excitation conditions of the VCSEL, (ii) the mirror design, which allows to change the cavity quality and the resonance frequency, and (iii) the number and position of active semiconductor quantum-wells.
AB - A microscopic theory for vertical-cavity surface-emitting lasers (VCSELs) with quantum-well active layers is applied to study the transient gain dynamics, nonequilibrium carrier effects and the influence of the laser design. We investigate how the laser response on femtosecond pulse excitation can be controlled in terms of (i) excitation conditions of the VCSEL, (ii) the mirror design, which allows to change the cavity quality and the resonance frequency, and (iii) the number and position of active semiconductor quantum-wells.
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UR - http://www.scopus.com/inward/citedby.url?scp=0030213779&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0030213779
VL - 69
SP - 1185
EP - 1187
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
ER -