Comment on the electron-hole droplet condensation in direct gap semiconductors

S. W. Koch

doi:10.1016/0038-1098(80)90172-6

Comment on the electron-hole droplet condensation in direct gap semiconductors

S. W. Koch

Optical Sciences, College of

Research output: Contribution to journal › Article

3 Scopus citations

Abstract

The electron-hole droplet nucleation in highly excited direct gap semiconductors is a non-equilibrium phase transition of second order. Within the framework of a Fokker - Planck approximation modifications of the thermodynamic phase diagram and the cluster distribution function are calculated. Due to the short lifetime of the electronic excitations only very small electron - hole clusters can be formed.

Original language	English (US)
Pages (from-to)	419-421
Number of pages	3
Journal	Solid State Communications
Volume	35
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(80)90172-6
State	Published - Jan 1 1980

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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Koch, S. W. (1980). Comment on the electron-hole droplet condensation in direct gap semiconductors. Solid State Communications, 35(5), 419-421. https://doi.org/10.1016/0038-1098(80)90172-6

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