Comment on the electron-hole droplet condensation in direct gap semiconductors

S. W. Koch

doi:10.1016/0038-1098(80)90172-6

Comment on the electron-hole droplet condensation in direct gap semiconductors

S. W. Koch

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The electron-hole droplet nucleation in highly excited direct gap semiconductors is a non-equilibrium phase transition of second order. Within the framework of a Fokker - Planck approximation modifications of the thermodynamic phase diagram and the cluster distribution function are calculated. Due to the short lifetime of the electronic excitations only very small electron - hole clusters can be formed.

Original language	English (US)
Pages (from-to)	419-421
Number of pages	3
Journal	Solid State Communications
Volume	35
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(80)90172-6
State	Published - Jan 1 1980

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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@article{2dc229e408274a498ec06a1036679b9e,

title = "Comment on the electron-hole droplet condensation in direct gap semiconductors",

abstract = "The electron-hole droplet nucleation in highly excited direct gap semiconductors is a non-equilibrium phase transition of second order. Within the framework of a Fokker - Planck approximation modifications of the thermodynamic phase diagram and the cluster distribution function are calculated. Due to the short lifetime of the electronic excitations only very small electron - hole clusters can be formed.",

author = "Koch, {S. W.}",

year = "1980",

month = jan,

day = "1",

doi = "10.1016/0038-1098(80)90172-6",

language = "English (US)",

volume = "35",

pages = "419--421",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "5",

}

TY - JOUR

T1 - Comment on the electron-hole droplet condensation in direct gap semiconductors

AU - Koch, S. W.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - The electron-hole droplet nucleation in highly excited direct gap semiconductors is a non-equilibrium phase transition of second order. Within the framework of a Fokker - Planck approximation modifications of the thermodynamic phase diagram and the cluster distribution function are calculated. Due to the short lifetime of the electronic excitations only very small electron - hole clusters can be formed.

AB - The electron-hole droplet nucleation in highly excited direct gap semiconductors is a non-equilibrium phase transition of second order. Within the framework of a Fokker - Planck approximation modifications of the thermodynamic phase diagram and the cluster distribution function are calculated. Due to the short lifetime of the electronic excitations only very small electron - hole clusters can be formed.

UR - http://www.scopus.com/inward/record.url?scp=0019049170&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019049170&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(80)90172-6

DO - 10.1016/0038-1098(80)90172-6

M3 - Article

AN - SCOPUS:0019049170

VL - 35

SP - 419

EP - 421

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 5

ER -