Comment on the electron-hole droplet condensation in direct gap semiconductors

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The electron-hole droplet nucleation in highly excited direct gap semiconductors is a non-equilibrium phase transition of second order. Within the framework of a Fokker - Planck approximation modifications of the thermodynamic phase diagram and the cluster distribution function are calculated. Due to the short lifetime of the electronic excitations only very small electron - hole clusters can be formed.

Original languageEnglish (US)
Pages (from-to)419-421
Number of pages3
JournalSolid State Communications
Volume35
Issue number5
DOIs
StatePublished - Jan 1 1980

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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