COMMENT ON THE ELECTRON-HOLE DROPLET CONDENSATION IN DIRECT GAP SEMICONDUCTORS.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The electron-hole droplet nucleation in highly excited direct gap semiconductors is a nonequilibrium phase transition of second order. Within the framework of a Fokker-Planck approximation, modifications of the thermodynamic phase diagram and the cluster distribution function are calculated. Due to the short lifetime of the electronic excitations, only very small electron-hole clusters can be formed.

Original languageEnglish (US)
Pages (from-to)419-421
Number of pages3
JournalSolid State Communications
Volume35
Issue number5
DOIs
StatePublished - Aug 1980
Externally publishedYes

Fingerprint

Condensation
condensation
Semiconductor materials
Electrons
Phase diagrams
Distribution functions
Nucleation
Phase transitions
distribution functions
phase diagrams
nucleation
Thermodynamics
life (durability)
thermodynamics
approximation
electronics
excitation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

COMMENT ON THE ELECTRON-HOLE DROPLET CONDENSATION IN DIRECT GAP SEMICONDUCTORS. / Koch, Stephan W.

In: Solid State Communications, Vol. 35, No. 5, 08.1980, p. 419-421.

Research output: Contribution to journalArticle

@article{2dc229e408274a498ec06a1036679b9e,
title = "COMMENT ON THE ELECTRON-HOLE DROPLET CONDENSATION IN DIRECT GAP SEMICONDUCTORS.",
abstract = "The electron-hole droplet nucleation in highly excited direct gap semiconductors is a nonequilibrium phase transition of second order. Within the framework of a Fokker-Planck approximation, modifications of the thermodynamic phase diagram and the cluster distribution function are calculated. Due to the short lifetime of the electronic excitations, only very small electron-hole clusters can be formed.",
author = "Koch, {Stephan W}",
year = "1980",
month = "8",
doi = "10.1016/0038-1098(80)90172-6",
language = "English (US)",
volume = "35",
pages = "419--421",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "5",

}

TY - JOUR

T1 - COMMENT ON THE ELECTRON-HOLE DROPLET CONDENSATION IN DIRECT GAP SEMICONDUCTORS.

AU - Koch, Stephan W

PY - 1980/8

Y1 - 1980/8

N2 - The electron-hole droplet nucleation in highly excited direct gap semiconductors is a nonequilibrium phase transition of second order. Within the framework of a Fokker-Planck approximation, modifications of the thermodynamic phase diagram and the cluster distribution function are calculated. Due to the short lifetime of the electronic excitations, only very small electron-hole clusters can be formed.

AB - The electron-hole droplet nucleation in highly excited direct gap semiconductors is a nonequilibrium phase transition of second order. Within the framework of a Fokker-Planck approximation, modifications of the thermodynamic phase diagram and the cluster distribution function are calculated. Due to the short lifetime of the electronic excitations, only very small electron-hole clusters can be formed.

UR - http://www.scopus.com/inward/record.url?scp=0019049170&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019049170&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(80)90172-6

DO - 10.1016/0038-1098(80)90172-6

M3 - Article

AN - SCOPUS:0019049170

VL - 35

SP - 419

EP - 421

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 5

ER -