Comparison of contact designs for improved stability of broad area semiconductor lasers

A. R. Zakharian, J. V. Moloney

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Patterned electrode designs are used to control optical mode shape in high-power semiconductor lasers by localizing current injection. In this letter, we present comparison of current density profiles in the active layer achieved by different contact designs. Single-voltage digitated contact, distributed regular and random Gaussian contact configurations are studied using numerical solutions of semiconductor device equations that govern electrostatic potential and carrier concentrations in three spatial dimensions. The results of our calculations indicate that lateral current profile is influenced by the contact shape in the transverse direction and the thickness of the junction on the contact side.

Original languageEnglish (US)
Pages (from-to)1280-1282
Number of pages3
JournalIEEE Photonics Technology Letters
Volume13
Issue number12
DOIs
StatePublished - Dec 1 2001

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Keywords

  • Current distribution
  • Numerical simulations
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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