Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies

S. C. Lee, Y. F. Zhao, R. D. Schrimpf, M. A. Neifeld, K. F. Galloway

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

Proton damage effects on multi-quantum-well (MQW) GaAs/GaAIAs laser diodes are studied using both current vs. voltage (I~V) and optical power vs. current (L~7) characteristics. The lifetime damage factor is calculated from 7-V characteristics and compared with the commonly used threshold current damage factor from L~/ characteristics. The lifetime damage factor is larger than the threshold current damage factor. This difference is explained by the different values of radiative lifetime when measuring the damage factors in the different operating regions. The two damage factors are compared at proton energies from 70 MeV to 200 MeV.

Original languageEnglish (US)
Pages (from-to)1797-1803
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume46
Issue number6 PART 1
DOIs
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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