Comparison of the chemical passivation of GaAs, In0.53Ga0.47As, and InSb with 1-eicosanethiol

Yissel Contreras, Pablo Mancheno-Posso, Anthony J Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Self-assembled 1-eicosanethiolate layers were deposited on the oxide-free (100) crystal planes of GaAs, In0.53Ga0.47As, and InSb to protect the surfaces. The layer prevented re-oxidation in air for 30 min on GaAs but only 8 min on In0.53Ga0.47As based on the O 1s x-ray photoelectron spectroscopy state. The layer protected InSb from reoxidation for only 4 min based on the O Auger state. Well-ordered monolayers formed on GaAs and In0.53Ga0.47As based on transmission Fourier transform infrared (FTIR) spectroscopy. A partially ordered layer was formed on InSb based on attenuated total reflection FTIR. The increased reoxidation rate of InGaAs and InSb is due to the larger lattice parameter of these surfaces and their In content, which forms weaker bonds to S, Ga, and Sb compared to Ga bonding to As and S.

Original languageEnglish (US)
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XIII
PublisherTrans Tech Publications Ltd
Pages55-60
Number of pages6
Volume255
ISBN (Print)9783035710847
DOIs
StatePublished - 2016
Event13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces , UCPSS 2016 - Knokke, Belgium
Duration: Sep 12 2016Sep 14 2016

Publication series

NameSolid State Phenomena
Volume255
ISSN (Electronic)16629779

Other

Other13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces , UCPSS 2016
CountryBelgium
CityKnokke
Period9/12/169/14/16

Fingerprint

Passivation
passivity
Photoelectron spectroscopy
Lattice constants
Fourier transform infrared spectroscopy
Monolayers
Fourier transforms
Infrared radiation
X rays
Oxidation
Oxides
Crystals
Air
x ray spectroscopy
lattice parameters
infrared spectroscopy
photoelectron spectroscopy
oxidation
oxides
gallium arsenide

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Contreras, Y., Mancheno-Posso, P., & Muscat, A. J. (2016). Comparison of the chemical passivation of GaAs, In0.53Ga0.47As, and InSb with 1-eicosanethiol. In Ultra Clean Processing of Semiconductor Surfaces XIII (Vol. 255, pp. 55-60). (Solid State Phenomena; Vol. 255). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.255.55

Comparison of the chemical passivation of GaAs, In0.53Ga0.47As, and InSb with 1-eicosanethiol. / Contreras, Yissel; Mancheno-Posso, Pablo; Muscat, Anthony J.

Ultra Clean Processing of Semiconductor Surfaces XIII. Vol. 255 Trans Tech Publications Ltd, 2016. p. 55-60 (Solid State Phenomena; Vol. 255).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Contreras, Y, Mancheno-Posso, P & Muscat, AJ 2016, Comparison of the chemical passivation of GaAs, In0.53Ga0.47As, and InSb with 1-eicosanethiol. in Ultra Clean Processing of Semiconductor Surfaces XIII. vol. 255, Solid State Phenomena, vol. 255, Trans Tech Publications Ltd, pp. 55-60, 13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces , UCPSS 2016, Knokke, Belgium, 9/12/16. https://doi.org/10.4028/www.scientific.net/SSP.255.55
Contreras Y, Mancheno-Posso P, Muscat AJ. Comparison of the chemical passivation of GaAs, In0.53Ga0.47As, and InSb with 1-eicosanethiol. In Ultra Clean Processing of Semiconductor Surfaces XIII. Vol. 255. Trans Tech Publications Ltd. 2016. p. 55-60. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.255.55
Contreras, Yissel ; Mancheno-Posso, Pablo ; Muscat, Anthony J. / Comparison of the chemical passivation of GaAs, In0.53Ga0.47As, and InSb with 1-eicosanethiol. Ultra Clean Processing of Semiconductor Surfaces XIII. Vol. 255 Trans Tech Publications Ltd, 2016. pp. 55-60 (Solid State Phenomena).
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