Compatibility in heterogeneous integration of a cdte interdigitated photoconductor with an aigaas field-effect transistor

M. Fallahi, F. Therez, D. Esteve, D. Kendil, M. Barbe, G. Cohen-Solal

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A CdTe PC-AlGaAs/GaAs FET OEIC has been fabricated for the first time. The compatibility of such an integration is shown. Such an integration permits the use of high-quality optical compounds with performance electronic materials. A responsivity of 30 A/W at 0.77 μm has been obtained for integrated circuits. This integration opens a new perspective in heterostructure infrared OEICs.

Original languageEnglish (US)
Pages (from-to)1245-1246
Number of pages2
JournalElectronics Letters
Volume24
Issue number19
DOIs
StatePublished - Jan 1 1988

    Fingerprint

Keywords

  • Field-effect transistors
  • Heterostructure integrated optics
  • Optoelectronics
  • Photoconducting devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this