A CdTe PC-AlGaAs/GaAs FET OEIC has been fabricated for the first time. The compatibility of such an integration is shown. Such an integration permits the use of high-quality optical compounds with performance electronic materials. A responsivity of 30 A/W at 0.77 μm has been obtained for integrated circuits. This integration opens a new perspective in heterostructure infrared OEICs.
- Field-effect transistors
- Heterostructure integrated optics
- Photoconducting devices
ASJC Scopus subject areas
- Electrical and Electronic Engineering