Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

K. Jandieri, P. Ludewig, T. Wegele, A. Beyer, B. Kunert, P. Springer, S. D. Baranovskii, Stephan W Koch, K. Volz, W. Stolz

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8 Scopus citations

Abstract

We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP-or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.

Original languageEnglish (US)
Article number065701
JournalJournal of Applied Physics
Volume118
Issue number6
DOIs
StatePublished - Aug 14 2015
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Jandieri, K., Ludewig, P., Wegele, T., Beyer, A., Kunert, B., Springer, P., Baranovskii, S. D., Koch, S. W., Volz, K., & Stolz, W. (2015). Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures. Journal of Applied Physics, 118(6), [065701]. https://doi.org/10.1063/1.4928331