Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

K. Jandieri, P. Ludewig, T. Wegele, A. Beyer, B. Kunert, P. Springer, S. D. Baranovskii, Stephan W Koch, K. Volz, W. Stolz

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP-or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.

Original languageEnglish (US)
Article number065701
JournalJournal of Applied Physics
Volume118
Issue number6
DOIs
StatePublished - Aug 14 2015
Externally publishedYes

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quantum wells
laser applications
phosphorus
conduction bands
valence
nitrogen

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Jandieri, K., Ludewig, P., Wegele, T., Beyer, A., Kunert, B., Springer, P., ... Stolz, W. (2015). Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures. Journal of Applied Physics, 118(6), [065701]. https://doi.org/10.1063/1.4928331

Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures. / Jandieri, K.; Ludewig, P.; Wegele, T.; Beyer, A.; Kunert, B.; Springer, P.; Baranovskii, S. D.; Koch, Stephan W; Volz, K.; Stolz, W.

In: Journal of Applied Physics, Vol. 118, No. 6, 065701, 14.08.2015.

Research output: Contribution to journalArticle

Jandieri, K, Ludewig, P, Wegele, T, Beyer, A, Kunert, B, Springer, P, Baranovskii, SD, Koch, SW, Volz, K & Stolz, W 2015, 'Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures', Journal of Applied Physics, vol. 118, no. 6, 065701. https://doi.org/10.1063/1.4928331
Jandieri K, Ludewig P, Wegele T, Beyer A, Kunert B, Springer P et al. Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures. Journal of Applied Physics. 2015 Aug 14;118(6). 065701. https://doi.org/10.1063/1.4928331
Jandieri, K. ; Ludewig, P. ; Wegele, T. ; Beyer, A. ; Kunert, B. ; Springer, P. ; Baranovskii, S. D. ; Koch, Stephan W ; Volz, K. ; Stolz, W. / Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures. In: Journal of Applied Physics. 2015 ; Vol. 118, No. 6.
@article{49c84d1c529d4ca3b4d3862ccb1a3b74,
title = "Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures",
abstract = "We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP-or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.",
author = "K. Jandieri and P. Ludewig and T. Wegele and A. Beyer and B. Kunert and P. Springer and Baranovskii, {S. D.} and Koch, {Stephan W} and K. Volz and W. Stolz",
year = "2015",
month = "8",
day = "14",
doi = "10.1063/1.4928331",
language = "English (US)",
volume = "118",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

AU - Jandieri, K.

AU - Ludewig, P.

AU - Wegele, T.

AU - Beyer, A.

AU - Kunert, B.

AU - Springer, P.

AU - Baranovskii, S. D.

AU - Koch, Stephan W

AU - Volz, K.

AU - Stolz, W.

PY - 2015/8/14

Y1 - 2015/8/14

N2 - We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP-or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.

AB - We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP-or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.

UR - http://www.scopus.com/inward/record.url?scp=84939163898&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84939163898&partnerID=8YFLogxK

U2 - 10.1063/1.4928331

DO - 10.1063/1.4928331

M3 - Article

AN - SCOPUS:84939163898

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

M1 - 065701

ER -