Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries

C. Shang, W. Huang, S. Raghavan, Z. Chen, R. Small, M. Peterson, J. Jeon

Research output: Contribution to journalConference article

Abstract

Copper contamination of oxide areas that may occur during the chemical mechanical planarization of copper based structures using hydroxylamiane based slurries has been investigated. The results indicate low levels of copper contamination that is easily removable using a DI water brush cleaning technique. A mechanism for copper contamination has been proposed through the construction of potential-pH diagrams.

Original languageEnglish (US)
Pages (from-to)295-298
Number of pages4
JournalDiffusion and Defect Data Pt.B: Solid State Phenomena
Volume76-77
StatePublished - Dec 1 2000
Event5th Internatinal Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) - Ostend, Belgium
Duration: Sep 18 2000Sep 20 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)

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