Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries

C. Shang, W. Huang, Srini Raghavan, Z. Chen, R. Small, M. Peterson, J. Jeon

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Copper contamination of oxide areas that may occur during the chemical mechanical planarization of copper based structures using hydroxylamiane based slurries has been investigated. The results indicate low levels of copper contamination that is easily removable using a DI water brush cleaning technique. A mechanism for copper contamination has been proposed through the construction of potential-pH diagrams.

Original languageEnglish (US)
Title of host publicationDiffusion and Defect Data Pt.B: Solid State Phenomena
PublisherScitec Publications Ltd.
Pages295-298
Number of pages4
Volume76-77
StatePublished - 2000
Event5th Internatinal Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) - Ostend, Belgium
Duration: Sep 18 2000Sep 20 2000

Other

Other5th Internatinal Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000)
CityOstend, Belgium
Period9/18/009/20/00

Fingerprint

Cytidine Monophosphate
slurries
Hydroxylamine
Slurries
Oxides
cleaning
Copper
Cleaning
contamination
Contamination
copper
oxides
Chemical mechanical polishing
brushes
Brushes
diagrams
Water
water

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Shang, C., Huang, W., Raghavan, S., Chen, Z., Small, R., Peterson, M., & Jeon, J. (2000). Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries. In Diffusion and Defect Data Pt.B: Solid State Phenomena (Vol. 76-77, pp. 295-298). Scitec Publications Ltd..

Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries. / Shang, C.; Huang, W.; Raghavan, Srini; Chen, Z.; Small, R.; Peterson, M.; Jeon, J.

Diffusion and Defect Data Pt.B: Solid State Phenomena. Vol. 76-77 Scitec Publications Ltd., 2000. p. 295-298.

Research output: Chapter in Book/Report/Conference proceedingChapter

Shang, C, Huang, W, Raghavan, S, Chen, Z, Small, R, Peterson, M & Jeon, J 2000, Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries. in Diffusion and Defect Data Pt.B: Solid State Phenomena. vol. 76-77, Scitec Publications Ltd., pp. 295-298, 5th Internatinal Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000), Ostend, Belgium, 9/18/00.
Shang C, Huang W, Raghavan S, Chen Z, Small R, Peterson M et al. Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries. In Diffusion and Defect Data Pt.B: Solid State Phenomena. Vol. 76-77. Scitec Publications Ltd. 2000. p. 295-298
Shang, C. ; Huang, W. ; Raghavan, Srini ; Chen, Z. ; Small, R. ; Peterson, M. ; Jeon, J. / Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries. Diffusion and Defect Data Pt.B: Solid State Phenomena. Vol. 76-77 Scitec Publications Ltd., 2000. pp. 295-298
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