Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries

C. Shang, W. Huang, S. Raghavan, Z. Chen, R. Small, M. Peterson, J. Jeon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Copper contamination of oxide areas that may occur during the chemical mechanical planarization of copper based structures using hydroxylamiane based slurries has been investigated. The results indicate low levels of copper contamination that is easily removable using a D1 water brush cleaning technique. A mechanism for copper contamination has been proposed through the construction of potential-pH diagrams.

Original languageEnglish (US)
Title of host publicationUltra Clean Processing of Silicon Surfaces 2000
EditorsMarc Heyns, Paul Mertens, Marc Meuris
PublisherTrans Tech Publications Ltd
Pages295-298
Number of pages4
ISBN (Print)9783908450573
DOIs
StatePublished - Jan 1 2001
Event5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000 - Ostend, Belgium
Duration: Sep 18 2000Sep 20 2000

Publication series

NameSolid State Phenomena
Volume76-77
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Other

Other5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000
CountryBelgium
CityOstend
Period9/18/009/20/00

Keywords

  • Chemical mechanical planarization
  • Contamination
  • Copper (Cu)
  • Hydroxylamine

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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