Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries

C. Shang, W. Huang, Srini Raghavan, Z. Chen, R. Small, M. Peterson, J. Jeon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Copper contamination of oxide areas that may occur during the chemical mechanical planarization of copper based structures using hydroxylamiane based slurries has been investigated. The results indicate low levels of copper contamination that is easily removable using a D1 water brush cleaning technique. A mechanism for copper contamination has been proposed through the construction of potential-pH diagrams.

Original languageEnglish (US)
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages295-298
Number of pages4
Volume76-77
ISBN (Print)9783908450573
DOIs
StatePublished - 2001
Event5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000 - Ostend, Belgium
Duration: Sep 18 2000Sep 20 2000

Publication series

NameSolid State Phenomena
Volume76-77
ISSN (Electronic)16629779

Other

Other5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000
CountryBelgium
CityOstend
Period9/18/009/20/00

Fingerprint

Cytidine Monophosphate
slurries
Hydroxylamine
Slurries
Oxides
cleaning
Copper
Cleaning
contamination
Contamination
copper
oxides
Chemical mechanical polishing
brushes
Brushes
diagrams
Water
water

Keywords

  • Chemical mechanical planarization
  • Contamination
  • Copper (Cu)
  • Hydroxylamine

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Shang, C., Huang, W., Raghavan, S., Chen, Z., Small, R., Peterson, M., & Jeon, J. (2001). Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries. In Solid State Phenomena (Vol. 76-77, pp. 295-298). (Solid State Phenomena; Vol. 76-77). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.76-77.295

Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries. / Shang, C.; Huang, W.; Raghavan, Srini; Chen, Z.; Small, R.; Peterson, M.; Jeon, J.

Solid State Phenomena. Vol. 76-77 Trans Tech Publications Ltd, 2001. p. 295-298 (Solid State Phenomena; Vol. 76-77).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shang, C, Huang, W, Raghavan, S, Chen, Z, Small, R, Peterson, M & Jeon, J 2001, Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries. in Solid State Phenomena. vol. 76-77, Solid State Phenomena, vol. 76-77, Trans Tech Publications Ltd, pp. 295-298, 5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000, Ostend, Belgium, 9/18/00. https://doi.org/10.4028/www.scientific.net/SSP.76-77.295
Shang C, Huang W, Raghavan S, Chen Z, Small R, Peterson M et al. Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries. In Solid State Phenomena. Vol. 76-77. Trans Tech Publications Ltd. 2001. p. 295-298. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.76-77.295
Shang, C. ; Huang, W. ; Raghavan, Srini ; Chen, Z. ; Small, R. ; Peterson, M. ; Jeon, J. / Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries. Solid State Phenomena. Vol. 76-77 Trans Tech Publications Ltd, 2001. pp. 295-298 (Solid State Phenomena).
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