Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates

Thomas J. Rotter, Jun Tatebayashi, Pradeep Senanayake, Ganesh Balakrishnan, Marcel Rattunde, Joachim Wagner, Jörg Hader, Jerome V. Moloney, Stephan W. Koch, L. Ralph Dawson, Diana L. Huffaker

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

We report on continuous-wave room-temperature operation at 2.014 μm of Sb-based optically-pumped vertically-external-cavity surface-emitting lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) growth mode. The IMF is characterized by a periodic array of 90° misfit dislocation and enables the relaxed GaSb growth with a low dislocation density on lattice-mismatched GaAs after the growth of only a few monolayers of GaSb. A maximum output power of >100 mW is obtained at -5°C.

Original languageEnglish (US)
Article number112102
JournalApplied Physics Express
Volume2
Issue number11
DOIs
StatePublished - Nov 1 2009

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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