We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GalnAs/GalnAsP multiple-quantum-well active layers. We observe linewidths as low as 1-9 MHz, differential quantum efficiencies as large as 33%/front facet at 1-5µm, and rapid electronic access to all frequencies throughout a 1000 GHz range. Indexing term : Semiconductor lasers.
ASJC Scopus subject areas
- Electrical and Electronic Engineering