Continuously Tunable 1-5&mu m Multiple-Quantum-Well GalnAs/GalnAsP Distributed-Bragg-Reflector Lasers

T. L. Koch, U. Koren, R. P. Gnall, C. A. Burrus, B. I. Miller

Research output: Contribution to journalArticle

122 Scopus citations

Abstract

We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GalnAs/GalnAsP multiple-quantum-well active layers. We observe linewidths as low as 1-9 MHz, differential quantum efficiencies as large as 33%/front facet at 1-5µm, and rapid electronic access to all frequencies throughout a 1000 GHz range. Indexing term : Semiconductor lasers.

Original languageEnglish (US)
Pages (from-to)1431-1433
Number of pages3
JournalElectronics Letters
Volume24
Issue number23
DOIs
StatePublished - Jan 1 1988
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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