We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GaInAs/GaInAsP multiple-quantum-well active layers. We observe linewidths as low as 1.9 MHz, differential quantum efficiencies as large as 33%/front facet at 1.5 μm and rapid electronic access to all frequencies throughout a 1000 GHz range.
|Original language||English (US)|
|Number of pages||3|
|Publication status||Published - Jan 1 1988|
ASJC Scopus subject areas
- Electrical and Electronic Engineering