Continuously tunable 1.5μm multiple-quantum-well GaInAs/GaInAsP distributed-Bragg-reflector lasers

Thomas L Koch, U. Koren, R. P. Gnall, C. A. Burrus, B. I. Miller

Research output: Contribution to journalArticle

122 Citations (Scopus)

Abstract

We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GaInAs/GaInAsP multiple-quantum-well active layers. We observe linewidths as low as 1.9 MHz, differential quantum efficiencies as large as 33%/front facet at 1.5 μm and rapid electronic access to all frequencies throughout a 1000 GHz range.

Original languageEnglish (US)
Pages (from-to)1431-1433
Number of pages3
JournalElectronics Letters
Volume24
Issue number23
StatePublished - Jan 1 1988
Externally publishedYes

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DBR lasers
Quantum efficiency
Linewidth
Semiconductor quantum wells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Koch, T. L., Koren, U., Gnall, R. P., Burrus, C. A., & Miller, B. I. (1988). Continuously tunable 1.5μm multiple-quantum-well GaInAs/GaInAsP distributed-Bragg-reflector lasers. Electronics Letters, 24(23), 1431-1433.

Continuously tunable 1.5μm multiple-quantum-well GaInAs/GaInAsP distributed-Bragg-reflector lasers. / Koch, Thomas L; Koren, U.; Gnall, R. P.; Burrus, C. A.; Miller, B. I.

In: Electronics Letters, Vol. 24, No. 23, 01.01.1988, p. 1431-1433.

Research output: Contribution to journalArticle

Koch, TL, Koren, U, Gnall, RP, Burrus, CA & Miller, BI 1988, 'Continuously tunable 1.5μm multiple-quantum-well GaInAs/GaInAsP distributed-Bragg-reflector lasers', Electronics Letters, vol. 24, no. 23, pp. 1431-1433.
Koch, Thomas L ; Koren, U. ; Gnall, R. P. ; Burrus, C. A. ; Miller, B. I. / Continuously tunable 1.5μm multiple-quantum-well GaInAs/GaInAsP distributed-Bragg-reflector lasers. In: Electronics Letters. 1988 ; Vol. 24, No. 23. pp. 1431-1433.
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