Control of effective cooling rate upon magnetron sputter deposition of glassy Ge15Te85

Julian Pries, Shuai Wei, Felix Hoff, Pierre Lucas, Matthias Wuttig

Research output: Contribution to journalArticle

Abstract

Reducing the enthalpy of as-deposited amorphous films is desirable as it improves their kinetic stability and enhances the reliability of resulting devices. Here we demonstrate that Ge15Te85 glass films of lower enthalpy are produced by increasing the voltage during magnetron sputter deposition. An increase of ~100 V leads to a drop in effective cooling rate of almost three orders of magnitude, thereby yielding markedly lower enthalpy glasses. The sputtering voltage therefore constitutes a novel parameter for tuning the fictive temperature of glass films, which could help to obtain ultra-stable glasses in combination with substrate temperature control.

Original languageEnglish (US)
Pages (from-to)223-226
Number of pages4
JournalScripta Materialia
Volume178
DOIs
StatePublished - Mar 15 2020

Fingerprint

Sputter deposition
Cooling
cooling
Enthalpy
Glass
glass
enthalpy
temperature control
Electric potential
electric potential
Amorphous films
Temperature control
Sputtering
Tuning
sputtering
tuning
Kinetics
kinetics
Substrates
Temperature

Keywords

  • Chalcogenide glasses
  • Fictive temperature
  • Glass transition
  • Metastable phases
  • Quenching
  • Undercooling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

Cite this

Control of effective cooling rate upon magnetron sputter deposition of glassy Ge15Te85 . / Pries, Julian; Wei, Shuai; Hoff, Felix; Lucas, Pierre; Wuttig, Matthias.

In: Scripta Materialia, Vol. 178, 15.03.2020, p. 223-226.

Research output: Contribution to journalArticle

Pries, Julian ; Wei, Shuai ; Hoff, Felix ; Lucas, Pierre ; Wuttig, Matthias. / Control of effective cooling rate upon magnetron sputter deposition of glassy Ge15Te85 In: Scripta Materialia. 2020 ; Vol. 178. pp. 223-226.
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